IXFX94N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

1.3 kW

Manufacturer :

IXYS

JESD-609 Code :

e1

Packaging :

Tube

Qualification Status :

Not Qualified

Factory Lead Time :

30 Weeks

Vgs(th) (Max) @ Id :

5V @ 8mA

RoHS :

Details

Published :

2010

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Min Operating Temperature :

-55 °C

Power Dissipation-Max :

1300W Tc

Package :

Tube

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

Max Operating Temperature :

150 °C

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFX94

Number of Terminations :

3

Rds On Max :

55 mΩ

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

94A Tc

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.055Ohm

Power Dissipation-Max (Abs) :

1300 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

3500 mJ

Transistor Application :

SWITCHING

Brand :

IXYS

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Drain to Source Resistance :

55 mΩ

Terminal Position :

Single

Mount :

Through Hole

Input Capacitance :

13.7 nF

Type :

PolarP2 HiPerFET

Case Connection :

DRAIN

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

FET Feature :

--

Element Configuration :

Single

Continuous Drain Current (ID) :

94A

Drain Current-Max (Abs) (ID) :

94 A

Rds On (Max) @ Id, Vgs :

55m Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

500V

Supplier Device Package :

PLUS247™-3

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

Number of Pins :

247

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

240A

Reach Compliance Code :

Compliant

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

Surface Mount :

No

Transistor Type :

1 N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Power Dissipation :

1.3kW

Tradename :

HiPerFET

Configuration :

Single

Power Dissipation (Max) :

1300W (Tc)

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

DS Breakdown Voltage-Min :

500 V

Product Status :

Active

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Series :

HiPerFET™, PolarHV™