IXFX90N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Resistance :

33mOhm

Number of Terminations :

3

Pbfree Code :

yes

Package / Case :

TO-247-3

ECCN Code :

EAR99

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

90 A

Rds On (Max) @ Id, Vgs :

33m Ω @ 45A, 10V

Qualification Status :

Not Qualified

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 8mA

Package Shape :

RECTANGULAR

Voltage - Rated DC :

300V

Width :

5.21 mm

DS Breakdown Voltage-Min :

300 V

Transistor Application :

SWITCHING

RoHS :

Details

Drain-source On Resistance-Max :

0.033 Ω

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

N-Channel

Turn-Off Delay Time :

100 ns

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

Not Applicable

Fall Time (Typ) :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Mounting Type :

Through Hole

Tradename :

HyperFET

Published :

2002

Power Dissipation (Max) :

560W (Tc)

Base Product Number :

IXFX90

Continuous Drain Current (ID) :

90A

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Rise Time :

55ns

Number of Terminals :

3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Power Dissipation :

560W

Length :

16.13 mm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Configuration :

Single

Packaging :

Tube

Transistor Polarity :

N-Channel

Power Dissipation-Max :

560W Tc

FET Feature :

--

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Operating Temperature :

-55°C~150°C TJ

Product Status :

Obsolete

Lead Free :

Lead Free

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

300V

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

PLUS247™-3

Manufacturer :

IXYS

Pin Count :

3

Brand :

IXYS

Power Dissipation-Max (Abs) :

560 W

Height :

21.34 mm

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Reach Compliance Code :

not_compliant

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Mount :

Through Hole

Maximum Operating Temperature :

+ 150 C

Pulsed Drain Current-Max (IDM) :

360 A

Current Rating :

90A

Drain to Source Breakdown Voltage :

300V

Package :

Tube

Channel Mode :

Enhancement