IXFX80N60P3

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Mfr.Part #
IXFX80N60P3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 80A PLUS247-3
Stock
3
In Stock :
3

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Package :
Tube
Turn On Delay Time :
48 ns
Transistor Type :
1 N-Channel
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 8mA
Configuration :
Single
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
600V
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Minimum Operating Temperature :
-55 °C
Mounting Style :
Through Hole
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFX80
Pulsed Drain Current-Max (IDM) :
200A
Fall Time (Typ) :
8 ns
Element Configuration :
Single
Series :
HiPerFET™, Polar3™
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Number of Pins :
247
Power Dissipation :
1.3kW
Package / Case :
TO-247-3
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
600V
Number of Elements :
1
JESD-30 Code :
R-PSIP-T3
Lead Free :
Lead Free
Factory Lead Time :
30 Weeks
Product Type :
MOSFET
Packaging :
Tube
Maximum Operating Temperature :
+150 °C
Number of Terminals :
3
Mount :
Through Hole
Brand :
IXYS
Number of Terminations :
3
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
70m Ω @ 500mA, 10V
Manufacturer :
IXYS
FET Type :
N-Channel
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) :
1300 W
Supplier Device Package :
PLUS247™-3
Published :
2011
Tradename :
HiPerFET
Height :
21.34mm
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Channel Type :
N
Width :
5.21mm
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
80A
Avalanche Energy Rating (Eas) :
2000 mJ
Turn-Off Delay Time :
87 ns
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Number of Elements per Chip :
1
Drain-source On Resistance-Max :
0.07Ohm
Package Type :
PLUS247
Gate to Source Voltage (Vgs) :
30V
Power Dissipation (Max) :
1300W (Tc)
Pin Count :
3
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
80 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
1300W Tc
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Channel Mode :
Enhancement
RoHS :
Details
DS Breakdown Voltage-Min :
600 V
Length :
16.13mm
Rise Time :
25ns
Datasheets
IXFX80N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX80N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:247, Package / Case:TO-247-3, Number of Terminations:3, IXFX80N60P3 pinout, IXFX80N60P3 datasheet PDF, IXFX80N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX80N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX80N60P3


N-Channel Tube 70m Ω @ 500mA, 10V ±30V 13100pF @ 25V 190nC @ 10V 600V TO-247-3

IXFX80N60P3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The maximum input capacitance of this device is 13100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 80 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 87 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 200A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 48 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFX80N60P3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 87 ns
based on its rated peak drain current 200A.
a 600V drain to source voltage (Vdss)


IXFX80N60P3 Applications


There are a lot of IXYS
IXFX80N60P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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