IXFX80N60P3
- Mfr.Part #
- IXFX80N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 80A PLUS247-3
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- --
- Package :
- Tube
- Turn On Delay Time :
- 48 ns
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 600V
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Minimum Operating Temperature :
- -55 °C
- Mounting Style :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFX80
- Pulsed Drain Current-Max (IDM) :
- 200A
- Fall Time (Typ) :
- 8 ns
- Element Configuration :
- Single
- Series :
- HiPerFET™, Polar3™
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Number of Pins :
- 247
- Power Dissipation :
- 1.3kW
- Package / Case :
- TO-247-3
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSIP-T3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 30 Weeks
- Product Type :
- MOSFET
- Packaging :
- Tube
- Maximum Operating Temperature :
- +150 °C
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Brand :
- IXYS
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 500mA, 10V
- Manufacturer :
- IXYS
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs) :
- 1300 W
- Supplier Device Package :
- PLUS247™-3
- Published :
- 2011
- Tradename :
- HiPerFET
- Height :
- 21.34mm
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Channel Type :
- N
- Width :
- 5.21mm
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 80A
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Turn-Off Delay Time :
- 87 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Number of Elements per Chip :
- 1
- Drain-source On Resistance-Max :
- 0.07Ohm
- Package Type :
- PLUS247
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation (Max) :
- 1300W (Tc)
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 80 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1300W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Channel Mode :
- Enhancement
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 600 V
- Length :
- 16.13mm
- Rise Time :
- 25ns
- Datasheets
- IXFX80N60P3
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N-Channel Tube 70m Ω @ 500mA, 10V ±30V 13100pF @ 25V 190nC @ 10V 600V TO-247-3
IXFX80N60P3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The maximum input capacitance of this device is 13100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 80 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 87 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 200A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 48 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX80N60P3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 87 ns
based on its rated peak drain current 200A.
a 600V drain to source voltage (Vdss)
IXFX80N60P3 Applications
There are a lot of IXYS
IXFX80N60P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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