IXFX80N50Q3
- Mfr.Part #
- IXFX80N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 80A PLUS247-3
- Stock
- 38,925
- In Stock :
- 38,925
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 247
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Product Status :
- Active
- DS Breakdown Voltage-Min :
- 500 V
- Width :
- 5.21mm
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Published :
- 2011
- Packaging :
- Tube
- Surface Mount :
- No
- Manufacturer :
- IXYS
- Supplier Device Package :
- PLUS247™-3
- JESD-30 Code :
- R-PSIP-T3
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 1250W Tc
- Case Connection :
- DRAIN
- Tradename :
- HiPerFET
- Turn On Delay Time :
- 30 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 40A, 10V
- Maximum Operating Temperature :
- + 150 C
- Terminal Position :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 1.25kW
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 30V
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 240A
- Terminal Form :
- THROUGH-HOLE
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Rise Time :
- 250ns
- Turn-Off Delay Time :
- 43 ns
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.065 Ω
- Factory Lead Time :
- 30 Weeks
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 500V
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Unknown
- Power Dissipation (Max) :
- 1250W (Tc)
- Mounting Type :
- Through Hole
- Length :
- 16.13mm
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 80A
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Base Product Number :
- IXFX80
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 65mOhm
- Height :
- 21.34mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Datasheets
- IXFX80N50Q3
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N-Channel Tube 65m Ω @ 40A, 10V ±30V 10000pF @ 25V 200nC @ 10V 500V TO-247-3
IXFX80N50Q3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 5000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10000pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 43 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX80N50Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a 500V drain to source voltage (Vdss)
IXFX80N50Q3 Applications
There are a lot of IXYS
IXFX80N50Q3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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