IXFX80N50Q3

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Mfr.Part #
IXFX80N50Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 80A PLUS247-3
Stock
38,925
In Stock :
38,925

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
247
Transistor Type :
1 N-Channel
Product Type :
MOSFET
Product Status :
Active
DS Breakdown Voltage-Min :
500 V
Width :
5.21mm
Pin Count :
3
Drain to Source Voltage (Vdss) :
500V
Number of Elements :
1
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Published :
2011
Packaging :
Tube
Surface Mount :
No
Manufacturer :
IXYS
Supplier Device Package :
PLUS247™-3
JESD-30 Code :
R-PSIP-T3
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
FET Type :
N-Channel
Power Dissipation-Max :
1250W Tc
Case Connection :
DRAIN
Tradename :
HiPerFET
Turn On Delay Time :
30 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65m Ω @ 40A, 10V
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
1.25kW
Vgs (Max) :
±30V
Package / Case :
TO-247-3
Gate to Source Voltage (Vgs) :
30V
Package Shape :
RECTANGULAR
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
240A
Terminal Form :
THROUGH-HOLE
RoHS :
Details
Avalanche Energy Rating (Eas) :
5000 mJ
Rise Time :
250ns
Turn-Off Delay Time :
43 ns
Mounting Style :
Through Hole
Brand :
IXYS
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Package :
Tube
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Drain-source On Resistance-Max :
0.065 Ω
Factory Lead Time :
30 Weeks
Transistor Polarity :
N-Channel
FET Feature :
--
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
500V
Lead Free :
Lead Free
Reach Compliance Code :
Unknown
Power Dissipation (Max) :
1250W (Tc)
Mounting Type :
Through Hole
Length :
16.13mm
Number of Terminals :
3
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Channel Mode :
Enhancement
Continuous Drain Current (ID) :
80A
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
Base Product Number :
IXFX80
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistance :
65mOhm
Height :
21.34mm
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Series :
HiPerFET™
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Datasheets
IXFX80N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX80N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:247, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFX80N50Q3 pinout, IXFX80N50Q3 datasheet PDF, IXFX80N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX80N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX80N50Q3


N-Channel Tube 65m Ω @ 40A, 10V ±30V 10000pF @ 25V 200nC @ 10V 500V TO-247-3

IXFX80N50Q3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 5000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10000pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 43 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX80N50Q3 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a 500V drain to source voltage (Vdss)


IXFX80N50Q3 Applications


There are a lot of IXYS
IXFX80N50Q3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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