IXFX80N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

1040W Tc

Package :

Tube

Product Status :

Active

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

3500 mJ

Rds On (Max) @ Id, Vgs :

65m Ω @ 40A, 10V

Power Dissipation :

1.04kW

Maximum Operating Temperature :

+ 150 C

Voltage - Rated DC :

500V

Input Capacitance (Ciss) (Max) @ Vds :

12700pF @ 25V

Manufacturer :

IXYS

Polarity/Channel Type :

N-Channel

Current Rating :

80A

Base Product Number :

IXFX80

Pin Count :

3

Fall Time (Typ) :

16 ns

DS Breakdown Voltage-Min :

500 V

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

30 Weeks

Mounting Style :

Through Hole

Element Configuration :

Single

Transistor Type :

1 N-Channel

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

5V @ 8mA

RoHS Status :

ROHS3 Compliant

Product Category :

MOSFET

Transistor Application :

SWITCHING

Configuration :

Single

Power Dissipation (Max) :

1040W (Tc)

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

200A

Case Connection :

DRAIN

Number of Terminals :

3

Turn-Off Delay Time :

70 ns

Drain to Source Breakdown Voltage :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Brand :

IXYS

Mount :

Through Hole

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

5.21 mm

Pbfree Code :

yes

Supplier Device Package :

PLUS247™-3

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Packaging :

Tube

RoHS :

Details

Mounting Type :

Through Hole

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Drain-source On Resistance-Max :

0.065 Ω

Number of Elements :

1

Rise Time :

27ns

Operating Mode :

ENHANCEMENT MODE

Resistance :

65mOhm

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

FET Feature :

--

Series :

HiPerFET™, PolarHT™

Terminal Position :

Single

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Qualification Status :

Not Qualified

JESD-609 Code :

e1

Minimum Operating Temperature :

- 55 C

Length :

16.13 mm

Number of Terminations :

3

Package / Case :

TO-247-3

Number of Pins :

3

Height :

21.34 mm

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

80A