IXFX74N50P2
- Mfr.Part #
- IXFX74N50P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 74A PLUS247-3
- Stock
- 17,820
- In Stock :
- 17,820
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 77 mΩ
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Power Dissipation :
- 1.4kW
- Drain Current-Max (Abs) (ID) :
- 74 A
- Published :
- 2011
- Package / Case :
- TO-247-3
- Supplier Device Package :
- PLUS247™-3
- Product Status :
- Obsolete
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS Corporation
- JESD-609 Code :
- e1
- Min Operating Temperature :
- -55 °C
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 185A
- Power Dissipation (Max) :
- 1400W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- TIN SILVER COPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Base Product Number :
- IXFX74
- Continuous Drain Current (ID) :
- 74A
- Number of Pins :
- 247
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 500V
- Max Operating Temperature :
- 150 °C
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 500V
- Max Power Dissipation :
- 1.4 kW
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 9900pF @ 25V
- RoHS :
- Compliant
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 1400 W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Drain to Source Resistance :
- 77 mΩ
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.077Ohm
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 1400W Tc
- DS Breakdown Voltage-Min :
- 500 V
- Packaging :
- Tube
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Input Capacitance :
- 9.9 nF
- Pin Count :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Series :
- HiPerFET™, PolarHV™
- Rds On (Max) @ Id, Vgs :
- 77m Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Datasheets
- IXFX74N50P2
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N-Channel Tube 77m Ω @ 500mA, 10V ±30V 9900pF @ 25V 165nC @ 10V 500V TO-247-3
IXFX74N50P2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 9900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 185A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 77 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFX74N50P2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 185A.
single MOSFETs transistor is 77 mΩ
a 500V drain to source voltage (Vdss)
IXFX74N50P2 Applications
There are a lot of IXYS
IXFX74N50P2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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