IXFX74N50P2

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Mfr.Part #
IXFX74N50P2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 74A PLUS247-3
Stock
17,820
In Stock :
17,820

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
77 mΩ
Avalanche Energy Rating (Eas) :
3000 mJ
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
74A Tc
Power Dissipation :
1.4kW
Drain Current-Max (Abs) (ID) :
74 A
Published :
2011
Package / Case :
TO-247-3
Supplier Device Package :
PLUS247™-3
Product Status :
Obsolete
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Vgs (Max) :
±30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS Corporation
JESD-609 Code :
e1
Min Operating Temperature :
-55 °C
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
185A
Power Dissipation (Max) :
1400W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
TIN SILVER COPPER
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Base Product Number :
IXFX74
Continuous Drain Current (ID) :
74A
Number of Pins :
247
Additional Feature :
AVALANCHE RATED
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Max Operating Temperature :
150 °C
Package :
Tube
Gate to Source Voltage (Vgs) :
30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
500V
Max Power Dissipation :
1.4 kW
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
9900pF @ 25V
RoHS :
Compliant
FET Feature :
--
Power Dissipation-Max (Abs) :
1400 W
Number of Elements :
1
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Qualification Status :
Not Qualified
Terminal Position :
Single
Drain to Source Resistance :
77 mΩ
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.077Ohm
Pbfree Code :
yes
Power Dissipation-Max :
1400W Tc
DS Breakdown Voltage-Min :
500 V
Packaging :
Tube
Number of Terminals :
3
Element Configuration :
Single
Case Connection :
DRAIN
Input Capacitance :
9.9 nF
Pin Count :
3
JESD-30 Code :
R-PSIP-T3
Series :
HiPerFET™, PolarHV™
Rds On (Max) @ Id, Vgs :
77m Ω @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Datasheets
IXFX74N50P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX74N50P2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:247, Mounting Type:Through Hole, IXFX74N50P2 pinout, IXFX74N50P2 datasheet PDF, IXFX74N50P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX74N50P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX74N50P2


N-Channel Tube 77m Ω @ 500mA, 10V ±30V 9900pF @ 25V 165nC @ 10V 500V TO-247-3

IXFX74N50P2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 9900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 185A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 77 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFX74N50P2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 185A.
single MOSFETs transistor is 77 mΩ
a 500V drain to source voltage (Vdss)


IXFX74N50P2 Applications


There are a lot of IXYS
IXFX74N50P2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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