IXFX64N60Q3
- Mfr.Part #
- IXFX64N60Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 64A PLUS247-3
- Stock
- 17
- In Stock :
- 17
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1250W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- PLUS247™-3
- Drain-source On Resistance-Max :
- 0.095Ohm
- Pulsed Drain Current-Max (IDM) :
- 250A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Width :
- 5.21mm
- Length :
- 16.13mm
- Package / Case :
- TO-247-3
- Continuous Drain Current (ID) :
- 64A
- Published :
- 2011
- Manufacturer :
- IXYS Corporation
- Series :
- HiPerFET™
- Package Shape :
- RECTANGULAR
- Turn On Delay Time :
- 45 ns
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 247
- Drain to Source Voltage (Vdss) :
- 600V
- Surface Mount :
- No
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 300ns
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 1250W (Tc)
- Drain Current-Max (Abs) (ID) :
- 64 A
- Number of Elements :
- 1
- Factory Lead Time :
- 21 Weeks
- Terminal Position :
- Single
- Power Dissipation-Max (Abs) :
- 1250 W
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 50 ns
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 32A, 10V
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 9930pF @ 25V
- Base Product Number :
- IXFX64
- Power Dissipation :
- 1.25kW
- Product Status :
- Obsolete
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 600 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Height :
- 21.34mm
- Datasheets
- IXFX64N60Q3
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N-Channel Tube 95m Ω @ 32A, 10V ±30V 9930pF @ 25V 190nC @ 10V 600V TO-247-3
IXFX64N60Q3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9930pF @ 25V.This device has a continuous drain current (ID) of [64A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 64 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 45 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFX64N60Q3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 600V drain to source voltage (Vdss)
IXFX64N60Q3 Applications
There are a lot of IXYS
IXFX64N60Q3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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