IXFX64N60P3
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- Mfr.Part #
- IXFX64N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 64A PLUS247-3
- Stock
- 294
- In Stock ：
- 294
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Transistor Type :
- 1 N-Channel
- FET Feature :
- --
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 32A, 10V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Package / Case :
- TO-247-3
- Rise Time :
- 17ns
- JESD-30 Code :
- R-PSIP-T3
- Product Type :
- MOSFET
- Height :
- 21.34mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 247
- Width :
- 5.21mm
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9900pF @ 25V
- Pin Count :
- 3
- Tradename :
- HiPerFET
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Power Dissipation :
- 1.13kW
- Number of Terminations :
- 3
- Configuration :
- Single
- Turn On Delay Time :
- 43 ns
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Turn-Off Delay Time :
- 66 ns
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 11 ns
- Length :
- 16.13mm
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 1130W Tc
- Number of Elements :
- 1
- Published :
- 2011
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXFX64
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 160A
- Supplier Device Package :
- PLUS247™-3
- Series :
- HiPerFET™, Polar3™
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Unknown
- Drain to Source Breakdown Voltage :
- 600V
- Factory Lead Time :
- 30 Weeks
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 64A
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.095Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 1130W (Tc)
- Datasheets
- IXFX64N60P3
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N-Channel Tube 95m Ω @ 32A, 10V ±30V 9900pF @ 25V 145nC @ 10V 600V TO-247-3
IXFX64N60P3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 64A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 160A.A turn-on delay time of 43 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX64N60P3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 160A.
a 600V drain to source voltage (Vdss)
IXFX64N60P3 Applications
There are a lot of IXYS
IXFX64N60P3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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