IXFX64N60P
- Mfr.Part #
- IXFX64N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 64A PLUS247-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 600V
- Qualification Status :
- Not Qualified
- Published :
- 2006
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 23ns
- Turn-Off Delay Time :
- 79 ns
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- 1 N-Channel
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Rds On (Max) @ Id, Vgs :
- 96m Ω @ 500mA, 10V
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Current Rating :
- 64A
- FET Feature :
- --
- Product Type :
- MOSFET
- Mount :
- Through Hole
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 1040W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- PLUS247™-3
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Length :
- 16.13 mm
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Width :
- 5.21 mm
- Element Configuration :
- Single
- Packaging :
- Tube
- Power Dissipation :
- 1.04kW
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Factory Lead Time :
- 30 Weeks
- Drain-source On Resistance-Max :
- 0.096 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 150A
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Resistance :
- 96mOhm
- JESD-609 Code :
- e1
- Additional Feature :
- AVALANCHE RATED
- Series :
- HiPerFET™, PolarHT™
- Mounting Style :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Height :
- 21.34 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 600V
- Surface Mount :
- No
- Number of Terminations :
- 3
- Pin Count :
- 3
- Tradename :
- HiPerFET
- Base Product Number :
- IXFX64
- Power Dissipation (Max) :
- 1040W (Tc)
- Number of Channels :
- 1 Channel
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 24 ns
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 12000pF @ 25V
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 64A
- Datasheets
- IXFX64N60P
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N-Channel Tube 96m Ω @ 500mA, 10V ±30V 12000pF @ 25V 200nC @ 10V 600V TO-247-3
IXFX64N60P Description
IXFX64N60P is a 600v PolarHVTM HiPerFET Power MOSFET. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IXFX64N60P in the TO-247-3 package with 1040W power dissipation. It is applied to many fields, like Automotive, Body electronics & lighting, Communications equipment, Wired networking, Industrial, and Motor drives.
IXFX64N60P Features
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS) rated
Low package inductance - easy to drive and protect
IXFX64N60P Applications
Automotive
Body electronics & lighting
Communications equipment
Wired networking
Industrial
Motor drives
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