IXFX64N50Q3
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- Mfr.Part #
- IXFX64N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 64A PLUS247-3
- Stock
- 30
- In Stock ：
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Package :
- Tube
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.085Ohm
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 1000W (Tc)
- Turn-Off Delay Time :
- 46 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Channel Type :
- N
- Gate to Source Voltage (Vgs) :
- 30V
- Channel Mode :
- Enhancement
- Supplier Device Package :
- PLUS247™-3
- Minimum Operating Temperature :
- -55 °C
- Power Dissipation-Max :
- 1000W Tc
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 247
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Polarity :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 64A
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Reach Compliance Code :
- Unknown
- Width :
- 5.21mm
- Tradename :
- HiPerFET
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 1kW
- Rise Time :
- 250ns
- Length :
- 16.13mm
- Factory Lead Time :
- 30 Weeks
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- +150 °C
- FET Type :
- N-Channel
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Manufacturer :
- IXYS
- Number of Elements per Chip :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Published :
- 2011
- Base Product Number :
- IXFX64
- Height :
- 21.34mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6950pF @ 25V
- Mount :
- Through Hole
- Configuration :
- Single
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 32A, 10V
- Package Type :
- PLUS247
- Turn On Delay Time :
- 36 ns
- Series :
- HiPerFET™
- RoHS :
- Details
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 160A
- Datasheets
- IXFX64N50Q3
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N-Channel Tube 85m Ω @ 32A, 10V ±30V 6950pF @ 25V 145nC @ 10V 500V TO-247-3
IXFX64N50Q3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 6950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 64A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 160A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX64N50Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)
IXFX64N50Q3 Applications
There are a lot of IXYS
IXFX64N50Q3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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