IXFX64N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

85m Ω @ 32A, 10V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

2500 mJ

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Rise Time :

25ns

Tradename :

HiPerFET

Mounting Style :

Through Hole

Factory Lead Time :

30 Weeks

Terminal Position :

Single

Product Type :

MOSFET

Brand :

IXYS

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Terminals :

3

Gate to Source Voltage (Vgs) :

30V

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

22 ns

Continuous Drain Current (ID) :

64A

Number of Elements :

1

DS Breakdown Voltage-Min :

500 V

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Transistor Type :

1 N-Channel

FET Type :

N-Channel

Supplier Device Package :

PLUS247™-3

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Current Rating :

64A

Series :

HiPerFET™, PolarHT™

Published :

2006

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

Power Dissipation :

830W

Resistance :

85mOhm

Power Dissipation (Max) :

830W (Tc)

Vgs (Max) :

±30V

Height :

21.34 mm

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Length :

16.13 mm

Package :

Tube

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Voltage - Rated DC :

500V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.085 Ω

Power Dissipation-Max (Abs) :

830 W

Drain Current-Max (Abs) (ID) :

64 A

Pulsed Drain Current-Max (IDM) :

150 A

Package Shape :

RECTANGULAR

Packaging :

Tube

Case Connection :

DRAIN

Reach Compliance Code :

Compliant

JESD-609 Code :

e1

Mounting Type :

Through Hole

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Type :

PolarHV HiPerFET Power MOSFET

Pin Count :

3

Turn-Off Delay Time :

85 ns

Mount :

Through Hole

Base Product Number :

IXFX64

FET Feature :

--

RoHS :

Details

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

5.21 mm

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Power Dissipation-Max :

830W Tc

Radiation Hardening :

No

Pbfree Code :

yes

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

500V

Product Category :

MOSFET

Channel Mode :

Enhancement

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3