IXFX64N50P
- Mfr.Part #
- IXFX64N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 64A PLUS247-3
- Stock
- 81
- In Stock :
- 81
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.085 Ω
- Power Dissipation-Max :
- 830W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Type :
- PolarHV HiPerFET Power MOSFET
- Product Type :
- MOSFET
- Height :
- 21.34 mm
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 64 A
- RoHS :
- Details
- Terminal Position :
- Single
- Series :
- HiPerFET™, PolarHT™
- Resistance :
- 85mOhm
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 500 V
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 32A, 10V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Fall Time (Typ) :
- 22 ns
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Length :
- 16.13 mm
- Minimum Operating Temperature :
- - 55 C
- Current Rating :
- 64A
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max (Abs) :
- 830 W
- Packaging :
- Tube
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Base Product Number :
- IXFX64
- JESD-30 Code :
- R-PSIP-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Supplier Device Package :
- PLUS247™-3
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- FET Feature :
- --
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 64A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Tradename :
- HiPerFET
- Factory Lead Time :
- 30 Weeks
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Rise Time :
- 25ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 8700pF @ 25V
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Drain to Source Breakdown Voltage :
- 500V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 85 ns
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Power Dissipation (Max) :
- 830W (Tc)
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Voltage - Rated DC :
- 500V
- Brand :
- IXYS
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Power Dissipation :
- 830W
- JESD-609 Code :
- e1
- Radiation Hardening :
- No
- Width :
- 5.21 mm
- Lead Free :
- Lead Free
- Datasheets
- IXFX64N50P
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N-Channel Tube 85m Ω @ 32A, 10V ±30V 8700pF @ 25V 150nC @ 10V 500V TO-247-3
IXFX64N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2500 mJ.A device's maximal input capacitance is 8700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 64A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 64 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 85 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 150 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFX64N50P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 150 A.
a 500V drain to source voltage (Vdss)
IXFX64N50P Applications
There are a lot of IXYS
IXFX64N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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