IXFX60N55Q2
- Mfr.Part #
- IXFX60N55Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 60A PLUS247-3
- Stock
- 33,577
- In Stock :
- 33,577
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Length :
- 16.13 mm
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 14ns
- Rds On Max :
- 88 mΩ
- Published :
- 2004
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 60A
- Brand :
- IXYS
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- PLUS247™-3
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Product Type :
- MOSFET
- Subcategory :
- MOSFETs
- DS Breakdown Voltage-Min :
- 550 V
- Tradename :
- HyperFET
- Mounting Style :
- Through Hole
- Fall Time (Typ) :
- 9 ns
- Drain to Source Voltage (Vdss) :
- 550V
- Input Capacitance :
- 6.9 nF
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- Series :
- HiPerFET™
- Package :
- Tube
- Surface Mount :
- No
- Base Product Number :
- IXFX60
- Pbfree Code :
- yes
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 30A, 10V
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Height :
- 21.34 mm
- Pulsed Drain Current-Max (IDM) :
- 240A
- Power Dissipation (Max) :
- 735W (Tc)
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Min Operating Temperature :
- -55 °C
- JEDEC-95 Code :
- TO-264AA
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 735W Tc
- Max Operating Temperature :
- 150 °C
- Drain to Source Resistance :
- 88 mΩ
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-247-3
- Max Power Dissipation :
- 735 W
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 57 ns
- Width :
- 5.21 mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 550V
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Power Dissipation :
- 735W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.088Ohm
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Datasheets
- IXFX60N55Q2
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N-Channel Tube 88m Ω @ 30A, 10V ±30V 6900pF @ 25V 200nC @ 10V 550V TO-247-3
IXFX60N55Q2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6900pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.Using VGS=550V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 550V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 57 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 88 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 550 V.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX60N55Q2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 240A.
single MOSFETs transistor is 88 mΩ
a 550V drain to source voltage (Vdss)
IXFX60N55Q2 Applications
There are a lot of IXYS
IXFX60N55Q2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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