IXFX60N55Q2

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Mfr.Part #
IXFX60N55Q2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 550V 60A PLUS247-3
Stock
33,577
In Stock :
33,577

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Terminal Position :
Single
Product Category :
MOSFET
Length :
16.13 mm
Operating Temperature :
-55°C~150°C TJ
Rise Time :
14ns
Rds On Max :
88 mΩ
Published :
2004
FET Feature :
--
Continuous Drain Current (ID) :
60A
Brand :
IXYS
Transistor Type :
1 N-Channel
Supplier Device Package :
PLUS247™-3
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Transistor Element Material :
SILICON
Packaging :
Tube
Product Type :
MOSFET
Subcategory :
MOSFETs
DS Breakdown Voltage-Min :
550 V
Tradename :
HyperFET
Mounting Style :
Through Hole
Fall Time (Typ) :
9 ns
Drain to Source Voltage (Vdss) :
550V
Input Capacitance :
6.9 nF
FET Type :
N-Channel
JESD-609 Code :
e1
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Case Connection :
DRAIN
Series :
HiPerFET™
Package :
Tube
Surface Mount :
No
Base Product Number :
IXFX60
Pbfree Code :
yes
Product Status :
Active
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
Rds On (Max) @ Id, Vgs :
88m Ω @ 30A, 10V
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Height :
21.34 mm
Pulsed Drain Current-Max (IDM) :
240A
Power Dissipation (Max) :
735W (Tc)
Avalanche Energy Rating (Eas) :
4000 mJ
Min Operating Temperature :
-55 °C
JEDEC-95 Code :
TO-264AA
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±30V
Element Configuration :
Single
Power Dissipation-Max :
735W Tc
Max Operating Temperature :
150 °C
Drain to Source Resistance :
88 mΩ
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-247-3
Max Power Dissipation :
735 W
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Turn-Off Delay Time :
57 ns
Width :
5.21 mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminals :
3
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
550V
Configuration :
Single
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Power Dissipation :
735W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Drain-source On Resistance-Max :
0.088Ohm
Pin Count :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Datasheets
IXFX60N55Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX60N55Q2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, IXFX60N55Q2 pinout, IXFX60N55Q2 datasheet PDF, IXFX60N55Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX60N55Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX60N55Q2


N-Channel Tube 88m Ω @ 30A, 10V ±30V 6900pF @ 25V 200nC @ 10V 550V TO-247-3

IXFX60N55Q2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6900pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.Using VGS=550V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 550V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 57 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 88 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 550 V.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX60N55Q2 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 240A.
single MOSFETs transistor is 88 mΩ
a 550V drain to source voltage (Vdss)


IXFX60N55Q2 Applications


There are a lot of IXYS
IXFX60N55Q2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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