IXFX55N50F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

560W

Element Configuration :

Single

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Factory Lead Time :

10 Weeks

Power Dissipation (Max) :

560W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

6700pF @ 25V

Surface Mount :

No

Fall Time (Typ) :

9.6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500 V

Rise Time :

20ns

JESD-30 Code :

R-PSIP-T3

RoHS Status :

RoHS Compliant

Series :

HiPerRF™

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2009

Package / Case :

TO-247-3

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Product Status :

Obsolete

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Voltage - Rated DC :

500V

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

220A

Turn-Off Delay Time :

45 ns

Rds On (Max) @ Id, Vgs :

85m Ω @ 27.5A, 10V

Base Product Number :

IXFX55

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Terminal Position :

Single

Supplier Device Package :

PLUS247™-3

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

560W Tc

Package :

Tube

FET Feature :

--

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Number of Elements :

1

Package Shape :

RECTANGULAR

Number of Pins :

3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

55A

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Manufacturer :

IXYS Corporation

Number of Terminations :

3

Mount :

Through Hole

FET Type :

N-Channel

ECCN Code :

EAR99

Continuous Drain Current (ID) :

55A

Drain-source On Resistance-Max :

0.0085Ohm

Avalanche Energy Rating (Eas) :

3000 mJ

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED