IXFX55N50F
- Mfr.Part #
- IXFX55N50F
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 55A PLUS247-3
- Stock
- 3,563
- In Stock :
- 3,563
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 9.6 ns
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 560W (Tc)
- Package / Case :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 220A
- Factory Lead Time :
- 10 Weeks
- Manufacturer :
- IXYS Corporation
- FET Feature :
- --
- JESD-30 Code :
- R-PSIP-T3
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Voltage - Rated DC :
- 500V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 27.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Product Status :
- Obsolete
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Rise Time :
- 20ns
- Base Product Number :
- IXFX55
- Power Dissipation-Max :
- 560W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HiPerRF™
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 45 ns
- Continuous Drain Current (ID) :
- 55A
- JESD-609 Code :
- e1
- Current Rating :
- 55A
- Number of Terminations :
- 3
- Packaging :
- Tube
- Published :
- 2009
- Input Capacitance (Ciss) (Max) @ Vds :
- 6700pF @ 25V
- Power Dissipation :
- 560W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Supplier Device Package :
- PLUS247™-3
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Breakdown Voltage :
- 500V
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Datasheets
- IXFX55N50F
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N-Channel Tube 85m Ω @ 27.5A, 10V ±20V 6700pF @ 25V 195nC @ 10V 500V TO-247-3
IXFX55N50F Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6700pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.A maximum pulsed drain current of 220A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFX55N50F Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 220A.
a 500V drain to source voltage (Vdss)
IXFX55N50F Applications
There are a lot of IXYS
IXFX55N50F applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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