IXFX55N50
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- Mfr.Part #
- IXFX55N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 55A PLUS247-3
- Stock
- 6,208
- In Stock ：
- 6,208
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 4.5V
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 500mA, 10V
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- PLUS247™-3
- Voltage - Rated DC :
- 500V
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Width :
- 5.21 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 625W Tc
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Brand :
- IXYS
- Length :
- 16.13 mm
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Base Product Number :
- IXFX55
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 220A
- Mounting Style :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 55A
- Height :
- 25.66mm
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- 500V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Resistance :
- 80mOhm
- Power Dissipation (Max) :
- 625W (Tc)
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 45 ns
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 120 ns
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Power Dissipation :
- 520W
- Packaging :
- Tube
- Tradename :
- HyperFET
- Turn On Delay Time :
- 45 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2002
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Manufacturer :
- IXYS
- Current Rating :
- 55A
- Series :
- HiPerFET™
- Product Status :
- Obsolete
- Element Configuration :
- Single
- Mount :
- Through Hole
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Max Junction Temperature (Tj) :
- 150°C
- Pin Count :
- 3
- Rise Time :
- 60ns
- Datasheets
- IXFX55N50
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N-Channel Tube 80m Ω @ 500mA, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V TO-247-3
IXFX55N50 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 55A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 120 ns.Peak drain current is 220A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFX55N50 Features
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 220A.
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)
IXFX55N50 Applications
There are a lot of IXYS
IXFX55N50 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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