IXFX52N60Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

735W Tc

Tradename :

HyperFET

Max Operating Temperature :

150 °C

Brand :

IXYS

Power Dissipation :

735W

Turn-Off Delay Time :

56 ns

Base Product Number :

IXFX52

Rise Time :

13ns

Series :

HiPerFET™

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

8.5 ns

Height :

21.34 mm

Number of Channels :

1 Channel

RoHS :

Details

Surface Mount :

No

Package Shape :

RECTANGULAR

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

115m Ω @ 500mA, 10V

DS Breakdown Voltage-Min :

600 V

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Subcategory :

MOSFETs

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 150 C

Published :

2003

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±30V

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Package :

Tube

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.115Ohm

FET Type :

N-Channel

Width :

5.21 mm

Pulsed Drain Current-Max (IDM) :

208A

Number of Elements :

1

Number of Terminals :

3

FET Feature :

--

Drain to Source Breakdown Voltage :

600V

Input Capacitance :

6.8 nF

Supplier Device Package :

PLUS247™-3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Power Dissipation (Max) :

735W (Tc)

Length :

16.13 mm

Continuous Drain Current (ID) :

52A

Product Status :

Active

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Resistance :

115 mΩ

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Min Operating Temperature :

-55 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Product Type :

MOSFET

Reach Compliance Code :

Compliant

Max Power Dissipation :

735 W

Pbfree Code :

yes

Product Category :

MOSFET

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

4000 mJ

Rds On Max :

115 mΩ