IXFX520N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Type :

TrenchT2 GigaMOS HiperFET Power MOSFET

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0022Ohm

Current - Continuous Drain (Id) @ 25°C :

520A Tc

Input Capacitance (Ciss) (Max) @ Vds :

41000pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Published :

2013

Product Type :

MOSFET

Min Operating Temperature :

-55 °C

FET Type :

N-Channel

Maximum Operating Temperature :

+ 175 C

Power Dissipation :

1.25kW

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

545nC @ 10V

Rise Time :

36 ns

Rds On Max :

2.2 MΩ

Vgs(th) (Max) @ Id :

5V @ 8mA

Package :

Tube

DS Breakdown Voltage-Min :

75V

Power Dissipation-Max :

1250W Tc

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

75V

Width :

5.21 mm

Reach Compliance Code :

Unknown

Product Status :

Active

Transistor Application :

SWITCHING

Base Product Number :

IXFX520

Length :

16.13 mm

Number of Elements :

1

Height :

21.34 mm

FET Feature :

--

RoHS :

Details

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-247-3

Max Power Dissipation :

1.25 kW

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 100A, 10V

Brand :

IXYS

Product Category :

MOSFET

Number of Pins :

3

Vgs (Max) :

±20V

Mount :

Through Hole

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Mounting Style :

Through Hole

Power Dissipation (Max) :

1250W (Tc)

Radiation Hardening :

No

JESD-609 Code :

e1

Continuous Drain Current (ID) :

520A

Series :

GigaMOS™, TrenchT2™

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

30 Weeks

ECCN Code :

EAR99

Manufacturer :

IXYS

Max Operating Temperature :

175 °C

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1 Channel

Input Capacitance :

41 nF

Terminal Position :

Single

Transistor Element Material :

SILICON

Supplier Device Package :

PLUS247™-3

Tradename :

HiPerFET

Case Connection :

DRAIN

Mounting Type :

Through Hole