IXFX50N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Transistor Element Material :

SILICON

Product Category :

MOSFET

Product Type :

MOSFET

Configuration :

Single

Drain to Source Voltage (Vdss) :

500V

Series :

HiPerFET™

Power Dissipation-Max (Abs) :

360 W

Width :

5.21 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

45 ns

Terminal Position :

Single

Power Dissipation-Max :

520W Tc

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Min Operating Temperature :

-55 °C

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

100m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

Drain to Source Resistance :

100 mΩ

Power Dissipation (Max) :

520W (Tc)

Turn-Off Delay Time :

120 ns

Number of Terminations :

3

Tradename :

HyperFET

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Gate to Source Voltage (Vgs) :

20V

Rise Time :

60ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

50 A

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

200A

Resistance :

100MOhm

Reach Compliance Code :

Compliant

Max Power Dissipation :

520 W

Package :

Tube

Number of Terminals :

3

Avalanche Energy Rating (Eas) :

3000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

FET Feature :

--

Mount :

Through Hole

Brand :

IXYS

Case Connection :

DRAIN

Lead Free :

Lead Free

Packaging :

Tube

Number of Channels :

1 Channel

Rds On Max :

100 mΩ

JESD-609 Code :

e1

Surface Mount :

No

DS Breakdown Voltage-Min :

500 V

Power Dissipation :

520W

Input Capacitance :

9.4 nF

RoHS :

Compliant

Number of Elements :

1

Vgs (Max) :

±20V

Product Status :

Active

Pin Count :

3

Radiation Hardening :

No

Max Operating Temperature :

150 °C

Element Configuration :

Single

Published :

2002

Drain-source On Resistance-Max :

0.1 Ω

Mounting Type :

Through Hole

Supplier Device Package :

PLUS247™-3

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Number of Pins :

3

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Height :

21.34 mm

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

50A

JESD-30 Code :

R-PSIP-T3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFX50

Package / Case :

TO-247-3

Length :

16.13 mm