IXFX48N60Q3
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- Mfr.Part #
- IXFX48N60Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 48A PLUS247-3
- Stock
- 38
- In Stock ：
- 38
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation :
- 1kW
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 600 V
- Published :
- 2011
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Base Product Number :
- IXFX48
- Power Dissipation-Max :
- 1000W Tc
- Transistor Type :
- 1 N-Channel
- Width :
- 5.21mm
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Drain-source On Resistance-Max :
- 0.14Ohm
- FET Feature :
- --
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Tradename :
- HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Number of Pins :
- 247
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 120A
- RoHS :
- Details
- Turn-Off Delay Time :
- 40 ns
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Factory Lead Time :
- 30 Weeks
- Continuous Drain Current (ID) :
- 48A
- Supplier Device Package :
- PLUS247™-3
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 7020pF @ 25V
- Rise Time :
- 300ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 600V
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 1000 W
- Drain to Source Voltage (Vdss) :
- 600V
- Drain Current-Max (Abs) (ID) :
- 48 A
- Turn On Delay Time :
- 37 ns
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSIP-T3
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 24A, 10V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- Power Dissipation (Max) :
- 1000W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Mount :
- Through Hole
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Height :
- 21.34mm
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 16.13mm
- Datasheets
- IXFX48N60Q3
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N-Channel Tube 140m Ω @ 24A, 10V ±30V 7020pF @ 25V 140nC @ 10V 600V TO-247-3
IXFX48N60Q3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7020pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 48A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [48 A] according to its drain current.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 120A.A turn-on delay time of 37 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX48N60Q3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 120A.
a 600V drain to source voltage (Vdss)
IXFX48N60Q3 Applications
There are a lot of IXYS
IXFX48N60Q3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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