IXFX48N60P

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Mfr.Part #
IXFX48N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 48A PLUS247-3
Stock
24,519
In Stock :
24,519

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Configuration :
Single
Factory Lead Time :
30 Weeks
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Resistance :
135mOhm
Supplier Device Package :
PLUS247™-3
Input Capacitance (Ciss) (Max) @ Vds :
8860pF @ 25V
Tradename :
HiPerFET
Height :
21.34 mm
Element Configuration :
Single
Surface Mount :
No
Case Connection :
DRAIN
Power Dissipation-Max :
830W Tc
Product Status :
Active
Drain to Source Voltage (Vdss) :
600V
Mount :
Through Hole
Width :
5.21 mm
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
5V @ 8mA
Mounting Type :
Through Hole
Package Shape :
RECTANGULAR
Voltage - Rated DC :
600V
JESD-609 Code :
e1
Transistor Element Material :
SILICON
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
Published :
2006
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Transistor Type :
1 N-Channel
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Pbfree Code :
yes
Package / Case :
TO-247-3
Fall Time (Typ) :
22 ns
Transistor Polarity :
N-Channel
Rds On (Max) @ Id, Vgs :
135m Ω @ 500mA, 10V
Drain to Source Breakdown Voltage :
600V
Turn-Off Delay Time :
85 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
48A
Subcategory :
MOSFETs
Rise Time :
25ns
JESD-30 Code :
R-PSIP-T3
Product Category :
MOSFET
FET Feature :
--
FET Type :
N-Channel
Base Product Number :
IXFX48
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
600 V
Package :
Tube
Manufacturer :
IXYS
Terminal Position :
Single
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Reach Compliance Code :
Unknown
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Power Dissipation :
830W
Length :
16.13 mm
Series :
HiPerFET™, PolarHT™
Number of Elements :
1
Mounting Style :
Through Hole
Number of Pins :
3
Drain-source On Resistance-Max :
0.135 Ω
Product Type :
MOSFET
Brand :
IXYS
Channel Mode :
Enhancement
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
110A
Power Dissipation (Max) :
830W (Tc)
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Current Rating :
48A
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
2000 mJ
Datasheets
IXFX48N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX48N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXFX48N60P pinout, IXFX48N60P datasheet PDF, IXFX48N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX48N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX48N60P


N-Channel Tube 135m Ω @ 500mA, 10V ±30V 8860pF @ 25V 150nC @ 10V 600V TO-247-3

IXFX48N60P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 8860pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 48A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 110A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFX48N60P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 600V drain to source voltage (Vdss)


IXFX48N60P Applications


There are a lot of IXYS
IXFX48N60P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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