IXFX48N60P
- Mfr.Part #
- IXFX48N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 48A PLUS247-3
- Stock
- 24,519
- In Stock :
- 24,519
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Configuration :
- Single
- Factory Lead Time :
- 30 Weeks
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- Resistance :
- 135mOhm
- Supplier Device Package :
- PLUS247™-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8860pF @ 25V
- Tradename :
- HiPerFET
- Height :
- 21.34 mm
- Element Configuration :
- Single
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 830W Tc
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 600V
- Mount :
- Through Hole
- Width :
- 5.21 mm
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Voltage - Rated DC :
- 600V
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- Number of Terminals :
- 3
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 22 ns
- Transistor Polarity :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 500mA, 10V
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 85 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 48A
- Subcategory :
- MOSFETs
- Rise Time :
- 25ns
- JESD-30 Code :
- R-PSIP-T3
- Product Category :
- MOSFET
- FET Feature :
- --
- FET Type :
- N-Channel
- Base Product Number :
- IXFX48
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 600 V
- Package :
- Tube
- Manufacturer :
- IXYS
- Terminal Position :
- Single
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Power Dissipation :
- 830W
- Length :
- 16.13 mm
- Series :
- HiPerFET™, PolarHT™
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.135 Ω
- Product Type :
- MOSFET
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 110A
- Power Dissipation (Max) :
- 830W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Current Rating :
- 48A
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Datasheets
- IXFX48N60P
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N-Channel Tube 135m Ω @ 500mA, 10V ±30V 8860pF @ 25V 150nC @ 10V 600V TO-247-3
IXFX48N60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 8860pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 48A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 110A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFX48N60P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 600V drain to source voltage (Vdss)
IXFX48N60P Applications
There are a lot of IXYS
IXFX48N60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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