IXFX44N80Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSIP-T3

Length :

16.13mm

Input Capacitance (Ciss) (Max) @ Vds :

9840pF @ 25V

Avalanche Energy Rating (Eas) :

3500 mJ

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Factory Lead Time :

30 Weeks

RoHS :

Details

Number of Pins :

247

Rds On (Max) @ Id, Vgs :

190m Ω @ 22A, 10V

Number of Channels :

1 Channel

Series :

HiPerFET™

Configuration :

Single

Base Product Number :

IXFX44

Power Dissipation-Max :

1250W Tc

Surface Mount :

No

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

FET Feature :

--

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

6.5V @ 8mA

Published :

2012

Rise Time :

300ns

Power Dissipation-Max (Abs) :

1250 W

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Package :

Tube

Drain to Source Breakdown Voltage :

800V

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

30V

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.19Ohm

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Vgs (Max) :

±30V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

44A

Mount :

Through Hole

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

800 V

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

1250W (Tc)

Number of Terminations :

3

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

44 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

MOSFET

Turn-Off Delay Time :

63 ns

Transistor Element Material :

SILICON

Supplier Device Package :

PLUS247™-3

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Packaging :

Tube

Number of Terminals :

3

Mounting Type :

Through Hole

Height :

21.34mm

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Power Dissipation :

1.25kW

Turn On Delay Time :

45 ns

Pulsed Drain Current-Max (IDM) :

130A

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Width :

5.21mm

Drain to Source Voltage (Vdss) :

800V

Tradename :

HiPerFET