IXFX44N80P

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Mfr.Part #
IXFX44N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 44A PLUS247-3
Stock
10,535
In Stock :
10,535

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarHT™
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Number of Terminals :
3
Height :
21.34 mm
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
0.19Ohm
Supplier Device Package :
PLUS247™-3
Packaging :
Tube
Terminal Position :
Single
Mount :
Through Hole
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
800V
Factory Lead Time :
30 Weeks
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSIP-T3
Package :
Tube
Avalanche Energy Rating (Eas) :
3400 mJ
Drain to Source Resistance :
190 mΩ
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs(th) (Max) @ Id :
5V @ 8mA
FET Feature :
--
Power Dissipation :
1.2kW
Configuration :
Single
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
22ns
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Pulsed Drain Current-Max (IDM) :
100A
Input Capacitance :
12 nF
Rds On (Max) @ Id, Vgs :
190m Ω @ 22A, 10V
Reach Compliance Code :
Compliant
Width :
5.21 mm
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Tradename :
HiPerFET
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Package / Case :
TO-247-3
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Max Operating Temperature :
150 °C
Power Dissipation (Max) :
1040W (Tc)
Brand :
IXYS
FET Type :
N-Channel
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Min Operating Temperature :
-55 °C
Channel Mode :
Enhancement
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Mounting Style :
Through Hole
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Rds On Max :
190 mΩ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Fall Time (Typ) :
27 ns
Transistor Element Material :
SILICON
Length :
16.13 mm
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Subcategory :
MOSFETs
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
1.04 kW
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
800V
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
198nC @ 10V
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Power Dissipation-Max :
1040W Tc
Type :
PolarHV HiPerFET Power MOSFET
Continuous Drain Current (ID) :
44A
Base Product Number :
IXFX44
Gate to Source Voltage (Vgs) :
30V
Turn-Off Delay Time :
75 ns
DS Breakdown Voltage-Min :
800 V
Vgs (Max) :
±30V
Product Status :
Active
Pbfree Code :
yes
Element Configuration :
Single
Datasheets
IXFX44N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX44N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Type:PolarHV HiPerFET Power MOSFET, IXFX44N80P pinout, IXFX44N80P datasheet PDF, IXFX44N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX44N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX44N80P


N-Channel Tube 190m Ω @ 22A, 10V ±30V 12000pF @ 25V 198nC @ 10V 800V TO-247-3

IXFX44N80P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3400 mJ.A device's maximum input capacitance is 12000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 190 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFX44N80P Features


the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 190 mΩ
a 800V drain to source voltage (Vdss)


IXFX44N80P Applications


There are a lot of IXYS
IXFX44N80P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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