IXFX44N80P

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Mfr.Part #
IXFX44N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 44A PLUS247-3
Stock
10,535
In Stock :
10,535

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFX44
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Gate Charge (Qg) (Max) @ Vgs :
198nC @ 10V
Power Dissipation-Max :
1040W Tc
Reach Compliance Code :
Compliant
Height :
21.34 mm
Power Dissipation :
1.2kW
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
800 V
Type :
PolarHV HiPerFET Power MOSFET
FET Feature :
--
Transistor Type :
1 N-Channel
Tradename :
HiPerFET
Number of Pins :
3
Manufacturer :
IXYS
Width :
5.21 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
1040W (Tc)
Avalanche Energy Rating (Eas) :
3400 mJ
Surface Mount :
No
Drain to Source Breakdown Voltage :
800V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Channel Mode :
Enhancement
Series :
HiPerFET™, PolarHT™
Product Category :
MOSFET
JESD-30 Code :
R-PSIP-T3
Factory Lead Time :
30 Weeks
Number of Terminations :
3
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Published :
2006
Length :
16.13 mm
Rds On Max :
190 mΩ
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
44A
Transistor Application :
SWITCHING
Package / Case :
TO-247-3
Configuration :
Single
Case Connection :
DRAIN
Vgs (Max) :
±30V
Pulsed Drain Current-Max (IDM) :
100A
Mount :
Through Hole
Product Type :
MOSFET
Fall Time (Typ) :
27 ns
Current - Continuous Drain (Id) @ 25°C :
44A Tc
JESD-609 Code :
e1
Max Power Dissipation :
1.04 kW
Drain to Source Resistance :
190 mΩ
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
800V
Min Operating Temperature :
-55 °C
Rise Time :
22ns
Max Operating Temperature :
150 °C
Subcategory :
MOSFETs
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Drain-source On Resistance-Max :
0.19Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Supplier Device Package :
PLUS247™-3
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
30V
Vgs(th) (Max) @ Id :
5V @ 8mA
Brand :
IXYS
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
190m Ω @ 22A, 10V
Number of Channels :
1 Channel
Lead Free :
Lead Free
Packaging :
Tube
Input Capacitance :
12 nF
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Turn-Off Delay Time :
75 ns
RoHS :
Details
Maximum Operating Temperature :
+ 150 C
Datasheets
IXFX44N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX44N80P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHV HiPerFET Power MOSFET, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, IXFX44N80P pinout, IXFX44N80P datasheet PDF, IXFX44N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX44N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX44N80P


N-Channel Tube 190m Ω @ 22A, 10V ±30V 12000pF @ 25V 198nC @ 10V 800V TO-247-3

IXFX44N80P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3400 mJ.A device's maximum input capacitance is 12000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 190 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFX44N80P Features


the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 190 mΩ
a 800V drain to source voltage (Vdss)


IXFX44N80P Applications


There are a lot of IXYS
IXFX44N80P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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