IXFX44N80P
- Mfr.Part #
- IXFX44N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 44A PLUS247-3
- Stock
- 10,535
- In Stock :
- 10,535
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFX44
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate Charge (Qg) (Max) @ Vgs :
- 198nC @ 10V
- Power Dissipation-Max :
- 1040W Tc
- Reach Compliance Code :
- Compliant
- Height :
- 21.34 mm
- Power Dissipation :
- 1.2kW
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 800 V
- Type :
- PolarHV HiPerFET Power MOSFET
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Tradename :
- HiPerFET
- Number of Pins :
- 3
- Manufacturer :
- IXYS
- Width :
- 5.21 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 1040W (Tc)
- Avalanche Energy Rating (Eas) :
- 3400 mJ
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 800V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Channel Mode :
- Enhancement
- Series :
- HiPerFET™, PolarHT™
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSIP-T3
- Factory Lead Time :
- 30 Weeks
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Published :
- 2006
- Length :
- 16.13 mm
- Rds On Max :
- 190 mΩ
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 44A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-247-3
- Configuration :
- Single
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 100A
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 27 ns
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 1.04 kW
- Drain to Source Resistance :
- 190 mΩ
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 800V
- Min Operating Temperature :
- -55 °C
- Rise Time :
- 22ns
- Max Operating Temperature :
- 150 °C
- Subcategory :
- MOSFETs
- Package Shape :
- RECTANGULAR
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 12000pF @ 25V
- Drain-source On Resistance-Max :
- 0.19Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- PLUS247™-3
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Brand :
- IXYS
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 22A, 10V
- Number of Channels :
- 1 Channel
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Input Capacitance :
- 12 nF
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 75 ns
- RoHS :
- Details
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- IXFX44N80P
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N-Channel Tube 190m Ω @ 22A, 10V ±30V 12000pF @ 25V 198nC @ 10V 800V TO-247-3
IXFX44N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3400 mJ.A device's maximum input capacitance is 12000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 190 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFX44N80P Features
the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 190 mΩ
a 800V drain to source voltage (Vdss)
IXFX44N80P Applications
There are a lot of IXYS
IXFX44N80P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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