IXFX44N55Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Mounting Style :

Through Hole

RoHS :

Details

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Manufacturer :

IXYS

Height :

21.34 mm

Case Connection :

DRAIN

Turn-Off Delay Time :

75 ns

Mounting Type :

Through Hole

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

2500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Base Product Number :

IXFX44

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™

Configuration :

Single

Width :

5.21 mm

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

550V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Subcategory :

MOSFETs

Reach Compliance Code :

Compliant

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Vgs (Max) :

±20V

Power Dissipation :

500W

Mount :

Through Hole

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Box

Element Configuration :

Single

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

120m Ω @ 22A, 10V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Pulsed Drain Current-Max (IDM) :

176A

Supplier Device Package :

PLUS247™-3

Transistor Type :

1 N-Channel

Product Status :

Active

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

500W Tc

Product Type :

MOSFET

Number of Pins :

3

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Rise Time :

20ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

44A

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

550V

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

500W (Tc)

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Product Category :

MOSFET

Length :

16.13 mm

Surface Mount :

No

DS Breakdown Voltage-Min :

550 V

FET Feature :

--

Published :

2002

Package / Case :

TO-247-3

Drain-source On Resistance-Max :

0.12Ohm