IXFX44N50Q

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Mfr.Part #
IXFX44N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 44A PLUS247-3
Stock
3,314
In Stock :
3,314

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
500 V
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
4V @ 4mA
Configuration :
Single
Package :
Tube
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
500V
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
176A
Power Dissipation-Max :
500W Tc
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
500V
Brand :
IXYS
Product Status :
Active
Case Connection :
DRAIN
Power Dissipation :
500W
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Number of Pins :
3
Number of Channels :
1 Channel
JESD-30 Code :
R-PSIP-T3
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Pbfree Code :
yes
Power Dissipation (Max) :
500W (Tc)
JESD-609 Code :
e1
Channel Mode :
Enhancement
FET Type :
N-Channel
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.12Ohm
Rise Time :
22ns
Avalanche Energy Rating (Eas) :
2500 mJ
Base Product Number :
IXFX44
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Mount :
Through Hole
Transistor Element Material :
SILICON
Series :
HiPerFET™
Published :
2003
Packaging :
Tube
Turn-Off Delay Time :
75 ns
Supplier Device Package :
PLUS247™-3
Width :
5.21 mm
Mounting Style :
Through Hole
Terminal Position :
Single
Mounting Type :
Through Hole
Length :
16.13 mm
Product Category :
MOSFET
Pin Count :
3
FET Feature :
--
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-247-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Type :
1 N-Channel
Fall Time (Typ) :
10 ns
Transistor Polarity :
N-Channel
Number of Terminals :
3
Element Configuration :
Single
Subcategory :
MOSFETs
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
21.34 mm
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
Compliant
Tradename :
HyperFET
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Continuous Drain Current (ID) :
44A
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Datasheets
IXFX44N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX44N50Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, IXFX44N50Q pinout, IXFX44N50Q datasheet PDF, IXFX44N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX44N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX44N50Q


N-Channel Tube 120m Ω @ 22A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V TO-247-3

IXFX44N50Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 176A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFX44N50Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFX44N50Q Applications


There are a lot of IXYS
IXFX44N50Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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