IXFX44N50Q
- Mfr.Part #
- IXFX44N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A PLUS247-3
- Stock
- 3,314
- In Stock :
- 3,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Configuration :
- Single
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 500V
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 176A
- Power Dissipation-Max :
- 500W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 500V
- Brand :
- IXYS
- Product Status :
- Active
- Case Connection :
- DRAIN
- Power Dissipation :
- 500W
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Number of Channels :
- 1 Channel
- JESD-30 Code :
- R-PSIP-T3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 500W (Tc)
- JESD-609 Code :
- e1
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.12Ohm
- Rise Time :
- 22ns
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Base Product Number :
- IXFX44
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Series :
- HiPerFET™
- Published :
- 2003
- Packaging :
- Tube
- Turn-Off Delay Time :
- 75 ns
- Supplier Device Package :
- PLUS247™-3
- Width :
- 5.21 mm
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Length :
- 16.13 mm
- Product Category :
- MOSFET
- Pin Count :
- 3
- FET Feature :
- --
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 10 ns
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Subcategory :
- MOSFETs
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 21.34 mm
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Compliant
- Tradename :
- HyperFET
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 44A
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Datasheets
- IXFX44N50Q
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N-Channel Tube 120m Ω @ 22A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V TO-247-3
IXFX44N50Q Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 176A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX44N50Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)
IXFX44N50Q Applications
There are a lot of IXYS
IXFX44N50Q applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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