IXFX40N90P

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Mfr.Part #
IXFX40N90P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 40A PLUS247-3
Stock
39,035
In Stock :
39,035

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
230m Ω @ 20A, 10V
Additional Feature :
AVALANCHE RATED
Mounting Style :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.21Ohm
Configuration :
Single
Reach Compliance Code :
Compliant
Input Capacitance :
14 nF
Pulsed Drain Current-Max (IDM) :
80A
FET Feature :
--
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
230nC @ 10V
Packaging :
Tube
Number of Pins :
247
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
46 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
900V
Supplier Device Package :
PLUS247™-3
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
Mount :
Through Hole
Tradename :
HiPerFET
Manufacturer :
IXYS
Base Product Number :
IXFX40
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Resistance :
210 mΩ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1500 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
HiPerFET™, PolarP2™
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Vgs (Max) :
±30V
Power Dissipation-Max :
960W Tc
Terminal Position :
Single
Rise Time :
50ns
Rds On Max :
230 mΩ
Vgs(th) (Max) @ Id :
6.5V @ 1mA
RoHS :
Details
FET Type :
N-Channel
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Min Operating Temperature :
-55 °C
Transistor Polarity :
N-Channel
Max Power Dissipation :
960 W
JESD-30 Code :
R-PSIP-T3
Element Configuration :
Single
Power Dissipation-Max (Abs) :
960 W
Power Dissipation :
960W
Product Category :
MOSFET
Package / Case :
TO-247-3
Number of Terminations :
3
Product Type :
MOSFET
Published :
2011
Continuous Drain Current (ID) :
40A
Pin Count :
3
Max Operating Temperature :
150 °C
Input Capacitance (Ciss) (Max) @ Vds :
14000pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 N-Channel
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Drain Current-Max (Abs) (ID) :
40 A
Power Dissipation (Max) :
960W (Tc)
Turn-Off Delay Time :
77 ns
DS Breakdown Voltage-Min :
900 V
Transistor Element Material :
SILICON
Pbfree Code :
yes
Product Status :
Active
Factory Lead Time :
30 Weeks
JESD-609 Code :
e1
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
900V
Datasheets
IXFX40N90P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX40N90P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:247, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, IXFX40N90P pinout, IXFX40N90P datasheet PDF, IXFX40N90P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX40N90P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX40N90P


N-Channel Tube 230m Ω @ 20A, 10V ±30V 14000pF @ 25V 230nC @ 10V 900V TO-247-3

IXFX40N90P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 14000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 40 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 77 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 210 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFX40N90P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 80A.
single MOSFETs transistor is 210 mΩ
a 900V drain to source voltage (Vdss)


IXFX40N90P Applications


There are a lot of IXYS
IXFX40N90P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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