IXFX38N80Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Power Dissipation-Max :

735W Tc

JESD-609 Code :

e1

Product Category :

MOSFET

Power Dissipation (Max) :

735W (Tc)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.22 Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Continuous Drain Current (ID) :

38A

FET Type :

N-Channel

Configuration :

Single

Lead Free :

Lead Free

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

150A

FET Feature :

--

Drain Current-Max (Abs) (ID) :

38 A

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED

Rise Time :

16ns

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max (Abs) :

735 W

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

800V

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Product Status :

Active

Published :

2004

Power Dissipation :

735W

Turn-Off Delay Time :

60 ns

Series :

HiPerFET™

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

4000 mJ

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Rds On (Max) @ Id, Vgs :

220m Ω @ 19A, 10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE

Base Product Number :

IXFX38

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Resistance :

220mOhm

Packaging :

Tube

Supplier Device Package :

PLUS247™-3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Number of Terminations :

3

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

800V

Package :

Tube

DS Breakdown Voltage-Min :

800 V

Transistor Application :

SWITCHING

Mount :

Through Hole

Surface Mount :

No

Package / Case :

TO-247-3

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

8340pF @ 25V

Channel Mode :

Enhancement

Terminal Position :

Single

Product Type :

MOSFET