IXFX360N10T

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Mfr.Part #
IXFX360N10T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 360A PLUS247-3
Stock
17,737
In Stock :
17,737

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-247-3
JESD-609 Code :
e1
Power Dissipation-Max :
1250W Tc
Mounting Type :
Through Hole
Factory Lead Time :
30 Weeks
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
100V
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
3000 mJ
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
33000pF @ 25V
Series :
GigaMOS™ HiPerFET™
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
525nC @ 10V
Power Dissipation (Max) :
1250W (Tc)
Terminal Position :
Single
ECCN Code :
EAR99
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
360 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Continuous Drain Current (ID) :
360A
Polarity/Channel Type :
N-Channel
Input Capacitance :
33 nF
Current - Continuous Drain (Id) @ 25°C :
360A Tc
Number of Channels :
1 Channel
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~175°C TJ
JESD-30 Code :
R-PSIP-T3
Pin Count :
3
RoHS :
Details
Transistor Polarity :
N-Channel
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
2.9m Ω @ 100A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
THROUGH-HOLE
Base Product Number :
IXFX360
Supplier Device Package :
PLUS247™-3
Brand :
IXYS
Vgs (Max) :
±20V
Published :
2011
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Operating Temperature :
+ 175 C
Drain-source On Resistance-Max :
0.0029Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
5V @ 3mA
Rds On Max :
2.9 mΩ
Pulsed Drain Current-Max (IDM) :
900A
Mount :
Through Hole
Power Dissipation-Max (Abs) :
1250 W
Lead Free :
Lead Free
Max Power Dissipation :
1.25 kW
Tradename :
HiPerFET
Number of Terminations :
3
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
100V
Pbfree Code :
yes
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS
Datasheets
IXFX360N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX360N10T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, IXFX360N10T pinout, IXFX360N10T datasheet PDF, IXFX360N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX360N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX360N10T


N-Channel Tube 2.9m Ω @ 100A, 10V ±20V 33000pF @ 25V 525nC @ 10V 100V TO-247-3

IXFX360N10T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 33000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360A, which represents the maximum continuous current it can conduct.In this device, the drain current is 360 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFX360N10T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 360A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFX360N10T Applications


There are a lot of IXYS
IXFX360N10T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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