IXFX32N80Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

30 Weeks

Rise Time :

300ns

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

32 A

Drain to Source Breakdown Voltage :

800V

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

21.34mm

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

32A

Drain-source On Resistance-Max :

0.27Ohm

Base Product Number :

IXFX32

DS Breakdown Voltage-Min :

800 V

Pulsed Drain Current-Max (IDM) :

80A

Surface Mount :

No

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Drain to Source Voltage (Vdss) :

800V

Package :

Tube

Number of Elements per Chip :

1

Mounting Style :

Through Hole

Width :

5.21mm

Package Type :

PLUS247

Packaging :

Tube

Length :

16.13mm

Maximum Operating Temperature :

+150 °C

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Series :

HiPerFET™

RoHS :

Details

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1000W Tc

Transistor Polarity :

N-Channel

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

270m Ω @ 16A, 10V

JESD-30 Code :

R-PSIP-T3

Number of Channels :

1 Channel

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Turn-Off Delay Time :

45 ns

Minimum Operating Temperature :

-55 °C

Channel Mode :

Enhancement

Supplier Device Package :

PLUS247™-3

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Number of Pins :

247

Number of Elements :

1

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

1000 W

FET Feature :

--

Product Status :

Active

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

1000W (Tc)

Avalanche Energy Rating (Eas) :

3000 mJ

Tradename :

HiPerFET

Turn On Delay Time :

38 ns

Transistor Element Material :

SILICON

Number of Terminations :

3

Power Dissipation :

1kW

Element Configuration :

Single

Package Shape :

RECTANGULAR

Terminal Position :

Single

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

6940pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Channel Type :

N

Product Category :

MOSFET

Case Connection :

DRAIN

Transistor Application :

SWITCHING