IXFX32N80P

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Mfr.Part #
IXFX32N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 32A PLUS247-3
Stock
2
In Stock :
2

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
8800pF @ 25V
Avalanche Energy Rating (Eas) :
2000 mJ
Fall Time (Typ) :
24 ns
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Mount :
Through Hole
Length :
16.13 mm
Additional Feature :
AVALANCHE RATED
Subcategory :
MOSFETs
Rds On Max :
270 mΩ
Power Dissipation :
830W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
JESD-30 Code :
R-PSFM-T3
Package :
Tube
Series :
HiPerFET™, PolarHT™
Max Power Dissipation :
830 W
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Continuous Drain Current (ID) :
32A
Drain to Source Breakdown Voltage :
800V
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.27Ohm
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
270m Ω @ 16A, 10V
Drain to Source Voltage (Vdss) :
800V
Published :
2006
Packaging :
Tube
Transistor Application :
SWITCHING
Min Operating Temperature :
-55 °C
Height :
21.34 mm
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Tradename :
HiPerFET
Input Capacitance :
8.8 nF
Max Operating Temperature :
150 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
Configuration :
Single
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Surface Mount :
No
Gate to Source Voltage (Vgs) :
30V
Package Shape :
RECTANGULAR
RoHS :
Details
FET Feature :
--
DS Breakdown Voltage-Min :
800 V
Number of Pins :
3
Power Dissipation-Max :
830W Tc
Terminal Form :
THROUGH-HOLE
Case Connection :
DRAIN
Power Dissipation (Max) :
830W (Tc)
Rise Time :
24ns
Element Configuration :
Single
Factory Lead Time :
30 Weeks
Manufacturer :
IXYS
Width :
5.21 mm
Number of Channels :
1 Channel
Product Status :
Active
Product Type :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Resistance :
270 mΩ
Number of Terminations :
3
Package / Case :
TO-247-3
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
PLUS247™-3
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Pin Count :
3
Number of Terminals :
3
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Turn-Off Delay Time :
85 ns
Vgs (Max) :
±30V
Channel Mode :
Enhancement
Mounting Style :
Through Hole
Qualification Status :
Not Qualified
Base Product Number :
IXFX32
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 8mA
Datasheets
IXFX32N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX32N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-247-3, IXFX32N80P pinout, IXFX32N80P datasheet PDF, IXFX32N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX32N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX32N80P


N-Channel Tube 270m Ω @ 16A, 10V ±30V 8800pF @ 25V 150nC @ 10V 800V TO-247-3

IXFX32N80P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 32A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 270 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFX32N80P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 85 ns
single MOSFETs transistor is 270 mΩ
a 800V drain to source voltage (Vdss)


IXFX32N80P Applications


There are a lot of IXYS
IXFX32N80P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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