IXFX32N80P
- Mfr.Part #
- IXFX32N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 32A PLUS247-3
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 8800pF @ 25V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Fall Time (Typ) :
- 24 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Mount :
- Through Hole
- Length :
- 16.13 mm
- Additional Feature :
- AVALANCHE RATED
- Subcategory :
- MOSFETs
- Rds On Max :
- 270 mΩ
- Power Dissipation :
- 830W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Package :
- Tube
- Series :
- HiPerFET™, PolarHT™
- Max Power Dissipation :
- 830 W
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 32A
- Drain to Source Breakdown Voltage :
- 800V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.27Ohm
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 16A, 10V
- Drain to Source Voltage (Vdss) :
- 800V
- Published :
- 2006
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Min Operating Temperature :
- -55 °C
- Height :
- 21.34 mm
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Tradename :
- HiPerFET
- Input Capacitance :
- 8.8 nF
- Max Operating Temperature :
- 150 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- Configuration :
- Single
- Brand :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 800 V
- Number of Pins :
- 3
- Power Dissipation-Max :
- 830W Tc
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 830W (Tc)
- Rise Time :
- 24ns
- Element Configuration :
- Single
- Factory Lead Time :
- 30 Weeks
- Manufacturer :
- IXYS
- Width :
- 5.21 mm
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Product Type :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Resistance :
- 270 mΩ
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- PLUS247™-3
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Number of Terminals :
- 3
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Turn-Off Delay Time :
- 85 ns
- Vgs (Max) :
- ±30V
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFX32
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Datasheets
- IXFX32N80P
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N-Channel Tube 270m Ω @ 16A, 10V ±30V 8800pF @ 25V 150nC @ 10V 800V TO-247-3
IXFX32N80P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 32A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 270 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFX32N80P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 85 ns
single MOSFETs transistor is 270 mΩ
a 800V drain to source voltage (Vdss)
IXFX32N80P Applications
There are a lot of IXYS
IXFX32N80P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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