IXFX32N50Q
- Mfr.Part #
- IXFX32N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A PLUS247-3
- Stock
- 3,870
- In Stock :
- 3,870
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 500 V
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- HiPerFET™
- Terminal Form :
- THROUGH-HOLE
- Pin Count :
- 3
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 416 W
- Pulsed Drain Current-Max (IDM) :
- 128A
- Supplier Device Package :
- PLUS247™-3
- Drain to Source Breakdown Voltage :
- 500V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Published :
- 2004
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 416W
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 32 A
- Continuous Drain Current (ID) :
- 32A
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Number of Pins :
- 3
- Fall Time (Typ) :
- 20 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 25V
- JESD-30 Code :
- R-PSIP-T3
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Mount :
- Through Hole
- Base Product Number :
- IXFX32
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 416W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Product Status :
- Obsolete
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 16A, 10V
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.15Ohm
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-247-3
- Turn-Off Delay Time :
- 75 ns
- Rise Time :
- 42ns
- Power Dissipation (Max) :
- 416W (Tc)
- Datasheets
- IXFX32N50Q
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N-Channel Tube 160m Ω @ 16A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-247-3
IXFX32N50Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3950pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 32 A.When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 128A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX32N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)
IXFX32N50Q Applications
There are a lot of IXYS
IXFX32N50Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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