IXFX32N50Q

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Mfr.Part #
IXFX32N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 32A PLUS247-3
Stock
3,870
In Stock :
3,870

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
DS Breakdown Voltage-Min :
500 V
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
500V
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
HiPerFET™
Terminal Form :
THROUGH-HOLE
Pin Count :
3
FET Feature :
--
Power Dissipation-Max (Abs) :
416 W
Pulsed Drain Current-Max (IDM) :
128A
Supplier Device Package :
PLUS247™-3
Drain to Source Breakdown Voltage :
500V
Avalanche Energy Rating (Eas) :
1500 mJ
Terminal Position :
Single
Package Shape :
RECTANGULAR
Published :
2004
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Power Dissipation :
416W
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
32 A
Continuous Drain Current (ID) :
32A
Manufacturer :
IXYS Corporation
Qualification Status :
Not Qualified
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Number of Pins :
3
Fall Time (Typ) :
20 ns
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
JESD-30 Code :
R-PSIP-T3
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
Configuration :
SINGLE WITH BUILT-IN DIODE
Element Configuration :
Single
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Pbfree Code :
yes
Number of Elements :
1
Mount :
Through Hole
Base Product Number :
IXFX32
Case Connection :
DRAIN
Power Dissipation-Max :
416W Tc
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Product Status :
Obsolete
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Rds On (Max) @ Id, Vgs :
160m Ω @ 16A, 10V
Surface Mount :
No
Drain-source On Resistance-Max :
0.15Ohm
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Package / Case :
TO-247-3
Turn-Off Delay Time :
75 ns
Rise Time :
42ns
Power Dissipation (Max) :
416W (Tc)
Datasheets
IXFX32N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX32N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-247-3, IXFX32N50Q pinout, IXFX32N50Q datasheet PDF, IXFX32N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX32N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX32N50Q


N-Channel Tube 160m Ω @ 16A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-247-3

IXFX32N50Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3950pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 32 A.When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 128A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX32N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)


IXFX32N50Q Applications


There are a lot of IXYS
IXFX32N50Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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