IXFX32N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

360W (Tc)

Pin Count :

3

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

FET Feature :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 4mA

Avalanche Energy Rating (Eas) :

1500 mJ

Pulsed Drain Current-Max (IDM) :

120A

Manufacturer :

IXYS Corporation

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

32A Tc

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Series :

HiPerFET™

Number of Terminals :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Published :

2000

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.15Ohm

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Pbfree Code :

yes

Number of Pins :

3

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

5450pF @ 25V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-30 Code :

R-PSIP-T3

Package Shape :

RECTANGULAR

Number of Terminations :

3

Terminal Position :

Single

Power Dissipation-Max :

360W Tc

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

150m Ω @ 15A, 10V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

32A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

JESD-609 Code :

e1

Supplier Device Package :

PLUS247™-3

Base Product Number :

IXFX32

Product Status :

Obsolete

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Packaging :

Tube

Lead Free :

Lead Free

Number of Elements :

1