IXFX32N100Q3
- Mfr.Part #
- IXFX32N100Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 32A PLUS247-3
- Stock
- 250
- In Stock :
- 250
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Tradename :
- HiPerFET
- FET Feature :
- --
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 96A
- Turn-Off Delay Time :
- 54 ns
- Number of Elements per Chip :
- 1
- FET Type :
- N-Channel
- Length :
- 16.13mm
- JESD-30 Code :
- R-PSIP-T3
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.32Ohm
- Factory Lead Time :
- 20 Weeks
- Reach Compliance Code :
- Unknown
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 32A
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Mounting Style :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 16A, 10V
- Rise Time :
- 250ns
- Width :
- 5.21mm
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 1kV
- Manufacturer :
- IXYS
- RoHS :
- Details
- Series :
- HiPerFET™
- Published :
- 2012
- Package :
- Tube
- Qualification :
- -
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Supplier Device Package :
- PLUS247™-3
- Turn On Delay Time :
- 45 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1250W Tc
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 1.25kW
- Number of Pins :
- 247
- Transistor Application :
- SWITCHING
- Continuous Drain Current Id :
- 32A
- Number of Elements :
- 1
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Minimum Operating Temperature :
- -55 °C
- MSL :
- MSL 1 - Unlimited
- Power Dissipation (Max) :
- 1250W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9940pF @ 25V
- Channel Type :
- N
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Maximum Operating Temperature :
- +150 °C
- Base Product Number :
- IXFX32
- Height :
- 21.34mm
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±30V
- Package Type :
- PLUS247
- Element Configuration :
- Single
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Datasheets
- IXFX32N100Q3
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N-Channel Tube 320m Ω @ 16A, 10V ±30V 9940pF @ 25V 195nC @ 10V 1000V TO-247-3
IXFX32N100Q3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9940pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX32N100Q3 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)
IXFX32N100Q3 Applications
There are a lot of IXYS
IXFX32N100Q3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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