IXFX32N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

1000 V

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Configuration :

Single

Number of Terminations :

3

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

75A

Drain Current-Max (Abs) (ID) :

32 A

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Reach Compliance Code :

Compliant

Type :

Polar Power MOSFET HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

1000V

Series :

HiPerFET™, PolarP2™

Published :

2008

Channel Mode :

Enhancement

Avalanche Energy Rating (Eas) :

1500 mJ

JESD-30 Code :

R-PSIP-T3

Package :

Tube

RoHS :

Details

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Length :

16.13 mm

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Continuous Drain Current (ID) :

32A

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

960W

Mount :

Through Hole

Pbfree Code :

yes

Fall Time (Typ) :

43 ns

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

5.21 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

320m Ω @ 16A, 10V

Transistor Polarity :

N-Channel

Number of Terminals :

3

Turn-Off Delay Time :

76 ns

Base Product Number :

IXFX32

Drain to Source Breakdown Voltage :

1kV

Vgs (Max) :

±30V

Number of Pins :

3

Height :

21.34 mm

Power Dissipation-Max (Abs) :

960 W

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

960W Tc

Tradename :

HiPerFET

Factory Lead Time :

30 Weeks

Mounting Style :

Through Hole

Supplier Device Package :

PLUS247™-3

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Transistor Type :

1 N-Channel

Rise Time :

55ns

Terminal Position :

Single

Product Category :

MOSFET

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Power Dissipation (Max) :

960W (Tc)

Drain-source On Resistance-Max :

0.32 Ω

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Transistor Application :

SWITCHING