IXFX320N17T2
- Mfr.Part #
- IXFX320N17T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 170V 320A PLUS247-3
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 45 nF
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 1670 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Output Current :
- 320A
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2009
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 1670W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Packaging :
- Tube
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 170 V
- Fall Time (Typ) :
- 230 ns
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 320A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Supplier Device Package :
- PLUS247™-3
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 170V
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PSIP-T3
- Product Category :
- MOSFET
- Product :
- MOSFET Gate Drivers
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Nominal Supply Current :
- 100A
- Max Power Dissipation :
- 1.67 kW
- Rds On Max :
- 5.2 mΩ
- FET Feature :
- --
- Rise Time :
- 170ns
- Gate Charge (Qg) (Max) @ Vgs :
- 640nC @ 10V
- Number of Pins :
- 247
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- RoHS :
- Details
- Max Operating Temperature :
- 175 °C
- Power Dissipation (Max) :
- 1670W (Tc)
- Turn-On Delay Time :
- 46 ns
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Channel Mode :
- Enhancement
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 800A
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 320A Tc
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Case Connection :
- DRAIN
- Base Product Number :
- IXFX320
- Transistor Polarity :
- N-Channel
- Output Voltage :
- 170V
- Number of Outputs :
- 1
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 320 A
- Turn On Delay Time :
- 46 ns
- Brand :
- IXYS
- Lead Free :
- Lead Free
- Tradename :
- HiPerFET
- Number of Drivers :
- 1
- Product Type :
- MOSFET
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 115 ns
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 30 Weeks
- Min Operating Temperature :
- -55 °C
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Series :
- GigaMOS™
- Maximum Operating Temperature :
- + 175 C
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 60A, 10V
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 45000pF @ 25V
- Datasheets
- IXFX320N17T2
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N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 45000pF @ 25V 640nC @ 10V 170V TO-247-3
IXFX320N17T2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The maximum input capacitance of this device is 45000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 320A.As shown in the table below, the drain current of this device is 320 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 115 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 800A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 46 ns seconds.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 170 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 170V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX320N17T2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 320A
the turn-off delay time is 115 ns
based on its rated peak drain current 800A.
a 170V drain to source voltage (Vdss)
IXFX320N17T2 Applications
There are a lot of IXYS
IXFX320N17T2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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