IXFX30N100Q2

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Mfr.Part #
IXFX30N100Q2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 30A PLUS247-3
Stock
27,868
In Stock :
27,868

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
5V @ 8mA
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Power Dissipation :
735W
Manufacturer :
Littelfuse Inc
Drain-source On Resistance-Max :
0.4 Ω
Power Dissipation-Max :
735W Tc
Vgs (Max) :
±30V
Supplier Device Package :
PLUS247™-3
RoHS Status :
ROHS3 Compliant
Package :
Tube
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
10 ns
Number of Pins :
247
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
400m Ω @ 15A, 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXFX30
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2004
Element Configuration :
Single
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
186nC @ 10V
Power Dissipation-Max (Abs) :
735 W
Height :
21.34mm
Input Capacitance (Ciss) (Max) @ Vds :
8200pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
THROUGH-HOLE
Length :
16.13mm
Number of Elements :
1
JESD-609 Code :
e1
Configuration :
SINGLE WITH BUILT-IN DIODE
Continuous Drain Current (ID) :
30A
DS Breakdown Voltage-Min :
1000 V
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
1000V
Turn On Delay Time :
22 ns
Width :
5.21mm
Rise Time :
14ns
Avalanche Energy Rating (Eas) :
4000 mJ
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
1kV
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
120A
FET Feature :
--
Number of Terminals :
3
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
30 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-247-3
Series :
HiPerFET™
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
735W (Tc)
Surface Mount :
No
Resistance :
400mOhm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Product Status :
Active
Turn-Off Delay Time :
60 ns
JESD-30 Code :
R-PSFM-T3
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Gate to Source Voltage (Vgs) :
30V
Datasheets
IXFX30N100Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX30N100Q2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:247, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, IXFX30N100Q2 pinout, IXFX30N100Q2 datasheet PDF, IXFX30N100Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX30N100Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX30N100Q2


N-Channel Tube 400m Ω @ 15A, 10V ±30V 8200pF @ 25V 186nC @ 10V 1000V TO-247-3

IXFX30N100Q2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 8200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 30 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 22 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFX30N100Q2 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 120A.
a 1000V drain to source voltage (Vdss)


IXFX30N100Q2 Applications


There are a lot of IXYS
IXFX30N100Q2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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