IXFX27N80Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Length :

16.13 mm

Max Operating Temperature :

150 °C

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Drain to Source Resistance :

300 mΩ

Element Configuration :

Single

Drain-source On Resistance-Max :

0.32 Ω

Number of Channels :

1 Channel

Turn-Off Delay Time :

50 ns

Terminal Position :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

5.21 mm

Type :

HiPerFET Power MOSFETS Q-CLASS

Rds On Max :

320 mΩ

Rds On (Max) @ Id, Vgs :

320m Ω @ 500mA, 10V

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

Min Operating Temperature :

-55 °C

Rise Time :

28ns

Vgs (Max) :

±20V

Lead Free :

Lead Free

Max Power Dissipation :

500 W

Power Dissipation :

500W

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Fall Time (Typ) :

13 ns

RoHS :

Details

Package / Case :

TO-247-3

Mounting Style :

Through Hole

JESD-609 Code :

e1

Configuration :

Single

Brand :

IXYS

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

108A

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Pin Count :

3

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Subcategory :

MOSFETs

Power Dissipation-Max :

500W Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Product Category :

MOSFET

Tradename :

HiPerFET

Product Status :

Active

Input Capacitance :

7.6 nF

Packaging :

Tube

Surface Mount :

No

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

27A

Power Dissipation (Max) :

500W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

PLUS247™-3

Number of Pins :

3

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

21.34 mm

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Number of Elements :

1

Mount :

Through Hole

Number of Terminals :

3

DS Breakdown Voltage-Min :

800 V

Series :

HiPerFET™

Avalanche Energy Rating (Eas) :

2500 mJ

Published :

2002

Factory Lead Time :

30 Weeks

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

800V

Drain to Source Voltage (Vdss) :

800V

Manufacturer :

IXYS

Base Product Number :

IXFX27

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSIP-T3