IXFX26N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain to Source Resistance :

300 mΩ

Power Dissipation-Max (Abs) :

560 W

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Drain Current-Max (Abs) (ID) :

26 A

Series :

HiPerFET™

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

300m Ω @ 13A, 10V

Case Connection :

DRAIN

Number of Pins :

3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Transistor Type :

1 N-Channel

Max Power Dissipation :

560 W

Drain to Source Voltage (Vdss) :

900V

Channel Mode :

Enhancement

Product Category :

MOSFET

Configuration :

Single

RoHS :

Details

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 8mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

560W Tc

Package / Case :

TO-247-3

Package :

Tube

Height :

21.34 mm

Gate to Source Voltage (Vgs) :

20V

Base Product Number :

IXFX26

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

104A

Width :

5.21 mm

Lead Free :

Lead Free

Rds On Max :

300 mΩ

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Min Operating Temperature :

-55 °C

Manufacturer :

IXYS

JESD-609 Code :

e1

Mounting Type :

Through Hole

Power Dissipation :

560W

Input Capacitance :

10.8 nF

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Max Operating Temperature :

150 °C

Terminal Form :

THROUGH-HOLE

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Package Shape :

RECTANGULAR

Number of Terminations :

3

DS Breakdown Voltage-Min :

900 V

Fall Time (Typ) :

24 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Rise Time :

35ns

Published :

2003

Brand :

IXYS

Drain-source On Resistance-Max :

0.3 Ω

Pbfree Code :

yes

Product Type :

MOSFET

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

26A

Mount :

Through Hole

Product Status :

Not For New Designs

Tradename :

HyperFET

Drain to Source Breakdown Voltage :

900V

Pin Count :

3

Turn-Off Delay Time :

130 ns

Element Configuration :

Single

Power Dissipation (Max) :

560W (Tc)

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

PLUS247™-3

Resistance :

300mOhm

Polarity/Channel Type :

N-Channel

Length :

16.13 mm

Operating Mode :

ENHANCEMENT MODE