IXFX26N60Q
- Mfr.Part #
- IXFX26N60Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A PLUS247-3
- Stock
- 5,941
- In Stock :
- 5,941
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 600 V
- Turn-Off Delay Time :
- 80 ns
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 360W (Tc)
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Bulk
- Reach Compliance Code :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 13A, 10V
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFX26
- Power Dissipation-Max (Abs) :
- 360 W
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2002
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 360W
- Series :
- HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 26 A
- Surface Mount :
- No
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminals :
- 3
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.25Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 104A
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Product Status :
- Obsolete
- Fall Time (Typ) :
- 16 ns
- Continuous Drain Current (ID) :
- 26A
- Drain to Source Voltage (Vdss) :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- PLUS247™-3
- Rise Time :
- 32ns
- Pin Count :
- 3
- Package :
- Box
- Power Dissipation-Max :
- 360W Tc
- RoHS Status :
- RoHS Compliant
- Datasheets
- IXFX26N60Q
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N-Channel Bulk 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V 600V TO-247-3
IXFX26N60Q Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 26A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 26 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 104A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFX26N60Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 104A.
a 600V drain to source voltage (Vdss)
IXFX26N60Q Applications
There are a lot of IXYS
IXFX26N60Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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