IXFX26N60Q

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Mfr.Part #
IXFX26N60Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 26A PLUS247-3
Stock
5,941
In Stock :
5,941

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
600 V
Turn-Off Delay Time :
80 ns
Element Configuration :
Single
Power Dissipation (Max) :
360W (Tc)
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
600V
FET Type :
N-Channel
FET Feature :
--
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Bulk
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
250m Ω @ 13A, 10V
Package Shape :
RECTANGULAR
Base Product Number :
IXFX26
Power Dissipation-Max (Abs) :
360 W
Number of Terminations :
3
Mount :
Through Hole
Manufacturer :
IXYS Corporation
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Published :
2002
Avalanche Energy Rating (Eas) :
1500 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
360W
Series :
HiPerFET™
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
26 A
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.25Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
104A
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
JESD-609 Code :
e1
Product Status :
Obsolete
Fall Time (Typ) :
16 ns
Continuous Drain Current (ID) :
26A
Drain to Source Voltage (Vdss) :
600V
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Supplier Device Package :
PLUS247™-3
Rise Time :
32ns
Pin Count :
3
Package :
Box
Power Dissipation-Max :
360W Tc
RoHS Status :
RoHS Compliant
Datasheets
IXFX26N60Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX26N60Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXFX26N60Q pinout, IXFX26N60Q datasheet PDF, IXFX26N60Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX26N60Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX26N60Q


N-Channel Bulk 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V 600V TO-247-3

IXFX26N60Q Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 26A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 26 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 104A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFX26N60Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 104A.
a 600V drain to source voltage (Vdss)


IXFX26N60Q Applications


There are a lot of IXYS
IXFX26N60Q applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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