IXFX26N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

Series :

HiPerFET™, PolarP2™

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Height :

21.34 mm

Gate to Source Voltage (Vgs) :

30V

Brand :

IXYS

Number of Pins :

3

Manufacturer :

IXYS

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

60A

Pin Count :

3

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

1.2kV

Number of Terminations :

3

Mount :

Through Hole

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Power Dissipation :

960W

Rise Time :

55ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain-source On Resistance-Max :

0.46Ohm

Power Dissipation (Max) :

960W (Tc)

Type :

Polar HiPerFET Power MOSFET

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Factory Lead Time :

30 Weeks

Packaging :

Tube

RoHS :

Details

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

1200V

Operating Temperature :

-55°C~150°C TJ

Length :

16.13 mm

Case Connection :

DRAIN

Reach Compliance Code :

Compliant

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

960W Tc

Mounting Style :

Through Hole

Drain Current-Max (Abs) (ID) :

26 A

Fall Time (Typ) :

58 ns

Product Status :

Active

Package :

Tube

Transistor Type :

1 N-Channel

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Power Dissipation-Max (Abs) :

960 W

Tradename :

HiPerFET

Number of Channels :

1 Channel

Turn-Off Delay Time :

76 ns

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

Rds On (Max) @ Id, Vgs :

500m Ω @ 13A, 10V

Product Type :

MOSFET

Package / Case :

TO-247-3

DS Breakdown Voltage-Min :

1200 V

JESD-609 Code :

e1

Continuous Drain Current (ID) :

26A

Channel Mode :

Enhancement

Supplier Device Package :

PLUS247™-3

Base Product Number :

IXFX26

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

FET Feature :

--

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

16000pF @ 25V

Surface Mount :

No

Width :

5.21 mm

Avalanche Energy Rating (Eas) :

1500 mJ

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C