IXFX26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

11.9 nF

Number of Elements :

1

Power Dissipation (Max) :

780W (Tc)

Package / Case :

TO-247-3

DS Breakdown Voltage-Min :

1000 V

Product Category :

MOSFET

Channel Mode :

Enhancement

Supplier Device Package :

PLUS247™-3

Number of Terminations :

3

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

26 A

Number of Channels :

1 Channel

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Maximum Operating Temperature :

+ 150 C

Terminal Form :

THROUGH-HOLE

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

65A

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Max Operating Temperature :

150 °C

Terminal Position :

Single

Max Power Dissipation :

780 W

Fall Time (Typ) :

50 ns

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS

JESD-30 Code :

R-PSIP-T3

Configuration :

Single

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Compliant

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Vgs (Max) :

±30V

Mount :

Through Hole

Drain-source On Resistance-Max :

0.39 Ω

Gate to Source Voltage (Vgs) :

30V

Surface Mount :

No

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

1000V

Tradename :

HiPerFET

Avalanche Energy Rating (Eas) :

1000 mJ

Mounting Style :

Through Hole

Continuous Drain Current (ID) :

26A

Published :

2008

Length :

16.13 mm

JESD-609 Code :

e1

Series :

HiPerFET™, PolarP2™

Transistor Application :

SWITCHING

Number of Terminals :

3

Brand :

IXYS

Drain to Source Breakdown Voltage :

1kV

Rise Time :

45ns

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

390m Ω @ 13A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Power Dissipation :

780W

Qualification Status :

Not Qualified

Drain to Source Resistance :

390 mΩ

Height :

21.34 mm

Transistor Polarity :

N-Channel

Width :

5.21 mm

Power Dissipation-Max :

780W Tc

Base Product Number :

IXFX26

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

780 W

Factory Lead Time :

30 Weeks

Pbfree Code :

yes

Turn-Off Delay Time :

72 ns

Pin Count :

3

Rds On Max :

390 mΩ

FET Type :

N-Channel