IXFX25N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Compliant

Fall Time (Typ) :

24 ns

Reach Compliance Code :

Compliant

Surface Mount :

No

Drain to Source Voltage (Vdss) :

900V

Length :

16.13 mm

Supplier Device Package :

PLUS247™-3

Product Status :

Obsolete

Series :

HiPerFET™

Input Capacitance :

10.8 nF

JESD-609 Code :

e1

Mount :

Through Hole

Package :

Tube

Vgs (Max) :

±20V

Mounting Style :

Through Hole

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Drain Current-Max (Abs) (ID) :

25 A

Brand :

IXYS

Avalanche Energy Rating (Eas) :

3000 mJ

Configuration :

Single

Case Connection :

DRAIN

Channel Mode :

Enhancement

Pulsed Drain Current-Max (IDM) :

100A

Tradename :

HyperFET

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Maximum Operating Temperature :

+ 150 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Transistor Polarity :

N-Channel

Number of Pins :

3

Mounting Type :

Through Hole

Product Category :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Rise Time :

35ns

Element Configuration :

Single

Drain to Source Resistance :

330 mΩ

Published :

2003

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

900V

Packaging :

Tube

Transistor Type :

1 N-Channel

FET Feature :

--

Height :

21.34 mm

Drain-source On Resistance-Max :

0.33 Ω

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Max Power Dissipation :

560 W

Width :

5.21 mm

Transistor Application :

SWITCHING

Power Dissipation-Max :

560W Tc

Turn-Off Delay Time :

130 ns

Product Type :

MOSFET

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

900 V

Base Product Number :

IXFX25

Power Dissipation (Max) :

560W (Tc)

Pin Count :

3

Rds On (Max) @ Id, Vgs :

330m Ω @ 500mA, 10V

Continuous Drain Current (ID) :

25A

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Rds On Max :

330 mΩ

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Terminal Position :

Single

Power Dissipation-Max (Abs) :

560 W

Power Dissipation :

560W