IXFX24N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

1000 V

Series :

HiPerRF™

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

560W (Tc)

Surface Mount :

No

Turn-Off Delay Time :

52 ns

Rise Time :

18ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Drain to Source Breakdown Voltage :

1kV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Base Product Number :

IXFX24

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Package :

Tube

Power Dissipation :

560W

Factory Lead Time :

10 Weeks

Element Configuration :

Single

Transistor Element Material :

SILICON

Packaging :

Tube

Continuous Drain Current (ID) :

24A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

PLUS247™-3

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

3000 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Terminal Form :

THROUGH-HOLE

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

96A

Manufacturer :

IXYS Corporation

Product Status :

Obsolete

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

1000V

Rds On (Max) @ Id, Vgs :

390m Ω @ 12A, 10V

Drain-source On Resistance-Max :

0.0039Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

FET Type :

N-Channel

Transistor Application :

SWITCHING

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

560W Tc

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Fall Time (Typ) :

11 ns

Operating Temperature :

-55°C~150°C TJ