IXFX24N100

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Mfr.Part #
IXFX24N100
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 24A PLUS 247
Stock
9,656
In Stock :
9,656

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Height :
21.34mm
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation :
1kW
Factory Lead Time :
30 Weeks
Power Dissipation (Max) :
1000W (Tc)
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Mount :
Through Hole
Transistor Type :
1 N-Channel
Rise Time :
300ns
Channel Type :
N
Package / Case :
TO-247-3
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Number of Pins :
247
Drain to Source Voltage (Vdss) :
1000V
FET Type :
N-Channel
Power Dissipation-Max :
1000W Tc
Number of Channels :
1 Channel
Number of Elements per Chip :
1
Width :
5.21mm
Transistor Element Material :
SILICON
Product Status :
Active
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.44Ohm
Length :
16.13mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSIP-T3
Minimum Operating Temperature :
-55 °C
Brand :
IXYS
Channel Mode :
Enhancement
Series :
HiPerFET™
Continuous Drain Current (ID) :
24A
Tradename :
HiPerFET
Pulsed Drain Current-Max (IDM) :
60A
Mounting Style :
Through Hole
Additional Feature :
AVALANCHE RATED
Pin Count :
3
RoHS :
Details
Turn On Delay Time :
38 ns
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
Package Type :
PLUS247
Manufacturer :
IXYS
Packaging :
Tube
Maximum Operating Temperature :
+150 °C
Base Product Number :
IXFX24
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
7200pF @ 25V
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Published :
2011
Configuration :
Single
Rds On (Max) @ Id, Vgs :
440m Ω @ 12A, 10V
Turn-Off Delay Time :
45 ns
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Number of Elements :
1
Package :
Tube
Supplier Device Package :
PLUS247™-3
Drain to Source Breakdown Voltage :
1kV
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFX24N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX24N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:247, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFX24N100 pinout, IXFX24N100 datasheet PDF, IXFX24N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX24N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX24N100


N-Channel Tube 440m Ω @ 12A, 10V ±30V 7200pF @ 25V 140nC @ 10V 1000V TO-247-3

IXFX24N100Q3 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 7200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 24A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 38 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFX24N100Q3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 60A.
a 1000V drain to source voltage (Vdss)


IXFX24N100Q3 Applications


There are a lot of IXYS
IXFX24N100Q3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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