IXFX210N17T

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Mfr.Part #
IXFX210N17T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 170V 210A PLUS247-3
Stock
43,039
In Stock :
43,039

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5V @ 4mA
Pin Count :
3
Drain to Source Voltage (Vdss) :
170V
Additional Feature :
AVALANCHE RATED
Product Status :
Obsolete
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Mount :
Through Hole
FET Feature :
--
FET Type :
N-Channel
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On Max :
7.5 mΩ
Power Dissipation-Max (Abs) :
1150 W
Drain-source On Resistance-Max :
0.0075Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Reach Compliance Code :
Compliant
Package / Case :
TO-247-3
Mounting Type :
Through Hole
Terminal Finish :
TIN SILVER COPPER
Power Dissipation-Max :
1150W Tc
Supplier Device Package :
PLUS247™-3
Avalanche Energy Rating (Eas) :
2000 mJ
Continuous Drain Current (ID) :
210A
Rds On (Max) @ Id, Vgs :
7.5m Ω @ 60A, 10V
Number of Terminations :
3
Operating Temperature :
-55°C~175°C TJ
Power Dissipation (Max) :
1150W (Tc)
Drain Current-Max (Abs) (ID) :
210 A
Pbfree Code :
yes
Base Product Number :
IXFX210
JESD-30 Code :
R-PSIP-T3
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
3
Input Capacitance :
18.8 nF
Number of Elements :
1
Series :
GigaMOS™
Case Connection :
DRAIN
Surface Mount :
No
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
18800pF @ 25V
Max Power Dissipation :
1.15 kW
Pulsed Drain Current-Max (IDM) :
580A
Packaging :
Tube
RoHS :
Compliant
Operating Mode :
ENHANCEMENT MODE
Published :
2009
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
170V
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
210A Tc
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
285nC @ 10V
Datasheets
IXFX210N17T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX210N17T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXFX210N17T pinout, IXFX210N17T datasheet PDF, IXFX210N17T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX210N17T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX210N17T


N-Channel Tube 7.5m Ω @ 60A, 10V ±20V 18800pF @ 25V 285nC @ 10V 170V TO-247-3

IXFX210N17T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 18800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 210A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 210 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 580A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 170V in order to maintain normal operation.Operating this transistor requires a 170V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFX210N17T Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 210A
based on its rated peak drain current 580A.
a 170V drain to source voltage (Vdss)


IXFX210N17T Applications


There are a lot of IXYS
IXFX210N17T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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