IXFX20N80Q
- Mfr.Part #
- IXFX20N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 20A PLUS247-3
- Stock
- 19,067
- In Stock :
- 19,067
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Supplier Device Package :
- PLUS247™-3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Drain Current-Max (Abs) (ID) :
- 20A
- JEDEC-95 Code :
- TO-247AD
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 80A
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 10A, 10V
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 800V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 800V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 360W Tc
- Power Dissipation (Max) :
- 360W (Tc)
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.42Ohm
- Case Connection :
- DRAIN
- Product Status :
- Obsolete
- Terminal Finish :
- TIN SILVER COPPER
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFX20
- Manufacturer :
- IXYS Corporation
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- HiPerFET™
- Datasheets
- IXFX20N80Q
N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-247-3
IXFX20N80Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 5100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 20A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFX20N80Q Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)
IXFX20N80Q Applications
There are a lot of IXYS
IXFX20N80Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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