IXFX20N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Factory Lead Time :

30 Weeks

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Transistor Element Material :

SILICON

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

1200 V

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Unknown

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

JESD-609 Code :

e1

Power Dissipation (Max) :

780W (Tc)

Terminal Position :

Single

Number of Pins :

247

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Lead Free :

Lead Free

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSIP-T3

Tradename :

HiPerFET

Mounting Type :

Through Hole

Power Dissipation :

780W

Length :

16.13 mm

Package / Case :

TO-247-3

Width :

5.21 mm

Pulsed Drain Current-Max (IDM) :

50A

Package :

Tube

Drain to Source Breakdown Voltage :

1.2kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Drain to Source Voltage (Vdss) :

1200V

Pin Count :

3

FET Type :

N-Channel

Configuration :

Single

Transistor Application :

SWITCHING

Supplier Device Package :

PLUS247™-3

Threshold Voltage :

6.5V

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

Base Product Number :

IXFX20

Surface Mount :

No

Turn-Off Delay Time :

72 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Power Dissipation-Max :

780W Tc

RoHS :

Details

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™, PolarP2™

Case Connection :

DRAIN

Number of Channels :

1 Channel

Rise Time :

45ns

Power Dissipation-Max (Abs) :

780 W

Number of Terminations :

3

FET Feature :

--

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

570m Ω @ 10A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

20A

Avalanche Energy Rating (Eas) :

1000 mJ

Mounting Style :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

20 A

Packaging :

Tube

Element Configuration :

Single

Fall Time (Typ) :

70 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Number of Terminals :

3

REACH SVHC :

No SVHC

Terminal Form :

THROUGH-HOLE

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

193nC @ 10V

ECCN Code :

EAR99

Height :

21.34 mm

Drain-source On Resistance-Max :

0.57Ohm

Manufacturer :

IXYS

Published :

2008

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V