IXFX20N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Continuous Drain Current (ID) :

20A

Length :

16.13 mm

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

80A

Configuration :

Single

Termination :

Through Hole

Rise Time :

45ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Reverse Recovery Time :

300 ns

Tradename :

HyperFET

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

75 ns

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Product Status :

Active

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Weight :

6g

DS Breakdown Voltage-Min :

1200 V

Power Dissipation-Max :

780W Tc

Brand :

IXYS

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.75 Ω

Number of Terminals :

3

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 25V

Fall Time (Typ) :

20 ns

Number of Channels :

1 Channel

REACH SVHC :

No SVHC

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Base Product Number :

IXFX20

Width :

5.21 mm

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Case Connection :

DRAIN

Package :

Tube

Series :

HiPerFET™

Number of Elements :

1

Power Dissipation (Max) :

780W (Tc)

Reach Compliance Code :

Compliant

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Lead Free :

Lead Free

Published :

2003

Surface Mount :

No

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Number of Terminations :

3

Subcategory :

MOSFETs

Threshold Voltage :

4.5V

Drain to Source Breakdown Voltage :

1.2kV

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Package Shape :

RECTANGULAR

Package / Case :

TO-247-3

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

PLUS247™-3

Resistance :

750mOhm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Dual Supply Voltage :

1.2kV

Element Configuration :

Single

Channel Mode :

Enhancement

Packaging :

Tube

Mounting Style :

Through Hole

Height :

21.34 mm

Drain to Source Voltage (Vdss) :

1200V

Transistor Type :

1 N-Channel

Product Category :

MOSFET

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

2000 mJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Power Dissipation :

780W

Rds On (Max) @ Id, Vgs :

750m Ω @ 500mA, 10V

Nominal Vgs :

4.5 V

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR