IXFX200N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Published :

2006

Avalanche Energy Rating (Eas) :

4000 mJ

Number of Terminations :

3

Base Product Number :

IXFX200

Fall Time (Typ) :

90 ns

Continuous Drain Current (ID) :

200A

Qualification Status :

Not Qualified

Package :

Tube

Series :

HiPerFET™, PolarP2™

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

100 V

Drain-source On Resistance-Max :

0.0075Ohm

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

3

Number of Elements :

1

FET Feature :

--

Vgs(th) (Max) @ Id :

5V @ 8mA

Tradename :

HiPerFET

Power Dissipation-Max :

830W Tc

RoHS :

Details

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Turn-Off Delay Time :

150 ns

Element Configuration :

Single

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

200 A

Terminal Form :

THROUGH-HOLE

Rise Time :

35ns

Terminal Position :

Single

Channel Mode :

Enhancement

JESD-30 Code :

R-PSIP-T3

Number of Channels :

1 Channel

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Width :

5.21 mm

Power Dissipation-Max (Abs) :

830 W

Supplier Device Package :

PLUS247™-3

Pulsed Drain Current-Max (IDM) :

400A

Transistor Type :

1 N-Channel

Configuration :

Single

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Product Type :

MOSFET

Length :

16.13 mm

ECCN Code :

EAR99

Factory Lead Time :

30 Weeks

Power Dissipation :

830W

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation (Max) :

830W (Tc)

Height :

21.34 mm

Product Status :

Active

FET Type :

N-Channel

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 175 C

Surface Mount :

No

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

235nC @ 10V

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

200A Tc

RoHS Status :

ROHS3 Compliant

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 100A, 10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Brand :

IXYS

Packaging :

Tube