IXFX180N085

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

90ns

Mounting Type :

Through Hole

Height :

21.34 mm

Rds On Max :

7 mΩ

FET Feature :

--

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

3000 mJ

Length :

16.13 mm

Power Dissipation-Max (Abs) :

560 W

Base Product Number :

IXFX180

Pbfree Code :

yes

Brand :

IXYS

Product Status :

Obsolete

Fall Time (Typ) :

55 ns

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

4V @ 8mA

Power Dissipation (Max) :

560W (Tc)

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

7mOhm @ 500mA, 10V

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

180 A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

85V

Case Connection :

DRAIN

Terminal Position :

Single

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Transistor Type :

1 N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

Packaging :

Tube

Drain to Source Voltage (Vdss) :

85V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Drain to Source Resistance :

7mOhm

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Qualification Status :

Not Qualified

Published :

2000

ECCN Code :

EAR99

Surface Mount :

No

Drain-source On Resistance-Max :

0.007 Ω

Tradename :

HyperFET

Polarity/Channel Type :

N-Channel

RoHS :

Details

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

320nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

560W Tc

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Continuous Drain Current (ID) :

180A

Max Operating Temperature :

150°C

Turn-Off Delay Time :

140 ns

Series :

HiPerFET™

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Width :

5.21 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

720 A

Number of Pins :

3

Mounting Style :

Through Hole

Pin Count :

3

DS Breakdown Voltage-Min :

85 V

Package / Case :

TO-247-3

Configuration :

Single

Supplier Device Package :

PLUS247™-3

Package Shape :

RECTANGULAR

Input Capacitance :

9.1nF

Power Dissipation :

560W

Mount :

Through Hole

Package :

Tube

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PSIP-T3

Manufacturer :

IXYS