IXFX180N07
- Mfr.Part #
- IXFX180N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 180A PLUS247
- Stock
- 15,378
- In Stock :
- 15,378
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Rise Time :
- 90ns
- Drain to Source Voltage (Vdss) :
- 70V
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 568W Tc
- Published :
- 2003
- Product Status :
- Active
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 55 ns
- FET Feature :
- -
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 500mA, 10V
- Power Dissipation-Max (Abs) :
- 560 W
- Gate Charge (Qg) (Max) @ Vgs :
- 420nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Drain-source On Resistance-Max :
- 0.006Ohm
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 70V
- Surface Mount :
- No
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 720A
- JESD-30 Code :
- R-PSIP-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 560W
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Other Names :
- Q1150608
- JESD-609 Code :
- e1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 180A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- DS Breakdown Voltage-Min :
- 70 V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 180 A
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- Supplier Device Package :
- PLUS247™-3
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFX180
- Transistor Element Material :
- SILICON
- Current Rating :
- 180A
- Turn-Off Delay Time :
- 140 ns
- Series :
- HiPerFET™
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 568W (Tc)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Through Hole
- Voltage - Rated DC :
- 70V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXFX180N07
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N-Channel Tube 6m Ω @ 500mA, 10V ±20V 9400pF @ 25V 420nC @ 10V 70V TO-247-3
IXFX180N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 180 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 140 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 720A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFX180N07 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
a 70V drain to source voltage (Vdss)
IXFX180N07 Applications
There are a lot of IXYS
IXFX180N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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