IXFV96N20P

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Mfr.Part #
IXFV96N20P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 200V 96A PLUS220
Stock
32,657
In Stock :
32,657

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
1500 mJ
Drain-source On Resistance-Max :
0.024Ohm
Packaging :
Tube
Mount :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS Corporation
Turn-Off Delay Time :
75 ns
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Terminal Form :
THROUGH-HOLE
Element Configuration :
Single
Drain to Source Breakdown Voltage :
200V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
600W (Tc)
Package :
Tube
Transistor Element Material :
SILICON
Case Connection :
DRAIN
JESD-30 Code :
R-PSIP-T3
Drain to Source Voltage (Vdss) :
200V
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Published :
2006
ECCN Code :
EAR99
Fall Time (Typ) :
30 ns
Rise Time :
30ns
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Base Product Number :
IXFV96
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
200 V
Mounting Type :
Through Hole
Package / Case :
TO-220-3, Short Tab
Additional Feature :
AVALANCHE RATED
Number of Terminals :
3
Surface Mount :
No
FET Feature :
--
Power Dissipation :
600W
Transistor Application :
SWITCHING
Pin Count :
3
Supplier Device Package :
PLUS220
Vgs (Max) :
±20V
Power Dissipation-Max :
600W Tc
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
5V @ 4mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
96A
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Pulsed Drain Current-Max (IDM) :
225A
Product Status :
Obsolete
Number of Pins :
3
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
RoHS Status :
RoHS Compliant
Series :
PolarHT™ HiPerFET™
Datasheets
IXFV96N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV96N20P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Short Tab, Number of Pins:3, IXFV96N20P pinout, IXFV96N20P datasheet PDF, IXFV96N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV96N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV96N20P


N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V 200V TO-220-3, Short Tab

IXFV96N20P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4800pF @ 25V.This device conducts a continuous drain current (ID) of 96A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 225A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFV96N20P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 225A.
a 200V drain to source voltage (Vdss)


IXFV96N20P Applications


There are a lot of IXYS
IXFV96N20P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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