IXFV96N20P
- Mfr.Part #
- IXFV96N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 96A PLUS220
- Stock
- 32,657
- In Stock :
- 32,657
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain-source On Resistance-Max :
- 0.024Ohm
- Packaging :
- Tube
- Mount :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS Corporation
- Turn-Off Delay Time :
- 75 ns
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 200V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 600W (Tc)
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSIP-T3
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Published :
- 2006
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 30 ns
- Rise Time :
- 30ns
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Base Product Number :
- IXFV96
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 200 V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3, Short Tab
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Surface Mount :
- No
- FET Feature :
- --
- Power Dissipation :
- 600W
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Supplier Device Package :
- PLUS220
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 600W Tc
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 96A
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Pulsed Drain Current-Max (IDM) :
- 225A
- Product Status :
- Obsolete
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- RoHS Status :
- RoHS Compliant
- Series :
- PolarHT™ HiPerFET™
- Datasheets
- IXFV96N20P
N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V 200V TO-220-3, Short Tab
IXFV96N20P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4800pF @ 25V.This device conducts a continuous drain current (ID) of 96A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 225A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFV96N20P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 225A.
a 200V drain to source voltage (Vdss)
IXFV96N20P Applications
There are a lot of IXYS
IXFV96N20P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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